IXFT140N10P IXYS SEMICONDUCTOR, IXFT140N10P Datasheet
IXFT140N10P
Manufacturer Part Number
IXFT140N10P
Description
MOSFET, N, TO-268
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFH140N10P.pdf
(5 pages)
Specifications of IXFT140N10P
Transistor Polarity
N Channel
Continuous Drain Current Id
140A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
11mohm
Rds(on) Test Voltage Vgs
15V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFT140N10P
Manufacturer:
IXYS
Quantity:
18 000
PolarHV
Power MOSFETs
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
© 2006 IXYS All rights reserved
D25
D(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
Mounting torque
TO-247
TO-268
Test Conditions
V
V
V
V
V
V
Note 1
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
= 15 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
D
= 250 µA
= 4.0 mA
, V
G
= 0.5 I
= 300 A
= 4 Ω
DS
= 0
D25
(TO-247)
GS
= 1 MΩ
DD
T
J
≤ V
= 175° C
DSS
IXFH 140N10P
IXFT 140N10P
JM
,
100
Min.
3.0
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
9
100
100
140
300
600
175
300
260
±20
±30
2.5
6.0
5.0
75
60
80
10
±100
500
Max.
5.0
25
11
V/ns
m Ω
m Ω
mJ
° C
° C
nA
µA
µA
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
g
J
V
TO-247 (IXFH)
TO-268 (IXFT)
G = Gate
S = Source
Features
l
l
l
Advantages
l
l
l
I
R
t
D25
rr
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
DSS
Easy to mount
Space savings
High power density
DS(on)
G
D
S
G
S
D = Drain
TAB = Drain
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤ 150 ns
DS99213E(01/06)
100
140
11 mΩ Ω Ω Ω Ω
D (TAB)
D (TAB)
A
V
Related parts for IXFT140N10P
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Discrete Semiconductor Modules 1000 Amps 100V
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules 300 Amps 1200V
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules 450 Amps 1200V
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules 1500 Amps 75V
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules 300 Amps 1200V
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules 225 Amps 1200V
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
DIODE MODULE EPITAXIAL 600V 95A
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
MODULE IGBT CBI E1
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
MODULE IGBT CBI E2
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
MOSFET N-CH 100V 1245A Y3-LI
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
THYRISTOR DIODE MODULE
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
FAST RECTIFIER, DUAL, 123A SOT-227B
Manufacturer:
IXYS SEMICONDUCTOR
Datasheet:
Part Number:
Description:
FAST RECTIFIER, DUAL, 96A, SOT-227B
Manufacturer:
IXYS SEMICONDUCTOR
Datasheet:
Part Number:
Description:
FAST RECTIFIER, DUAL, 60A, SOT-227B
Manufacturer:
IXYS SEMICONDUCTOR
Datasheet:
IXFT140N10P Summary of contents
Page 1
PolarHV HiPerFET TM Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions 25° 175° C DSS 25° 175° DGR J V Continuous GS ...
Page 2
Symbol Test Conditions 0 D25 C iss MHz oss rss t d(on ...
Page 3
Fig. 1. Output Characteristics @ 25 140 V = 10V GS 9V 120 100 0.2 0.4 0.6 0 Volts D S Fig. 3. Output Characteristics @ 150 140 V = 10V GS ...
Page 4
Fig. 7. Input Adm ittance 250 225 200 175 150 125 100 º 150 º º - 4.5 5 5 Volts G S Fig. ...
Page 5
...