IRFR9214TRLPBF Vishay, IRFR9214TRLPBF Datasheet
IRFR9214TRLPBF
Specifications of IRFR9214TRLPBF
Related parts for IRFR9214TRLPBF
IRFR9214TRLPBF Summary of contents
Page 1
... The DPAK is designed for surface mounting using vapor P-Channel MOSFET phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. DPAK (TO-252) SiHFR9214TRL-GE3 a IRFR9214TRLPbF a SiHFR9214TL-E3 a IRFR9214TRL a SiHFR9214TL = 25 °C, unless otherwise noted ° ...
Page 2
... IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
Page 3
... Drain-to-Source Voltage (V) DS Fig Typical Output Characteristics, T Document Number: 91282 S10-1139-Rev. C, 17-May-10 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 -4.5V ° 10 100 = 25 °C C -4.5V ° 10 100 = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix ° J ° 150 -50V DS 20μs PULSE WIDTH 0 Gate-to-Source Voltage (V) GS Fig ...
Page 4
... IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Vishay Siliconix 400 1MHz iss rss oss ds gd 300 200 100 Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage -1 =-200V DS V =-125V =-50V FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...
Page 5
... RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91282 S10-1139-Rev. C, 17-May-10 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 125 150 ° 0.001 0. Rectangular Pulse Duration (sec) 1 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig ...
Page 6
... IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Vishay Siliconix D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Driver 15 V 200 TOP 160 BOTTOM 120 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...
Page 7
... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91282. Document Number: 91282 S10-1139-Rev ...
Page 8
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...