IRFR9214TRLPBF Vishay, IRFR9214TRLPBF Datasheet - Page 3

• Manufacturer Part Number: IRFR9214TRLPBF
• Description: P CHANNEL MOSFET, -250V, 2.7A D-PAK
• Manufacturer: Vishay

Specifications of IRFR9214TRLPBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -2.7A
• Drain Source Voltage Vds: -250V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: - 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91282
S10-1139-Rev. C, 17-May-10
0.1
0.1
Fig. 2 - Typical Output Characteristics, T
10
Fig. 1 - Typical Output Characteristics, T
10
1
1
0.1
0.1
TOP
BOTTOM
TOP
BOTTOM
-V
-V
DS
DS
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
1
20μs PULSE WIDTH
T = 150 C
20μs PULSE WIDTH
T = 25 C
J
J
10
10
-4.5V
-4.5V
IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
°
°
C
C
= 150 °C
= 25 °C
100
100
Fig. 4 - Normalized On-Resistance vs. Temperature
0.1
10
2.5
2.0
1.5
1.0
0.5
0.0
1
4
-60 -40 -20
Fig. 3 - Typical Transfer Characteristics
I =
D
T = 25 C
-V
J
-2.7A
5
GS
T , Junction Temperature ( C)
J
, Gate-to-Source Voltage (V)
°
0
6
20 40
7
60 80 100 120 140 160
Vishay Siliconix
V
20μs PULSE WIDTH
T = 150 C
DS
J
8
= -50V
°
V
www.vishay.com
°
GS
9
=
-10V
10
3