IRFR9214TRLPBF Vishay, IRFR9214TRLPBF Datasheet - Page 7

• Manufacturer Part Number: IRFR9214TRLPBF
• Description: P CHANNEL MOSFET, -250V, 2.7A D-PAK
• Manufacturer: Vishay

Specifications of IRFR9214TRLPBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -2.7A
• Drain Source Voltage Vds: -250V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: - 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91282.
Document Number: 91282
S10-1139-Rev. C, 17-May-10
Re-applied
voltage
Reverse
recovery
current
+
R
-
g
D.U.T.
• Compliment N-Channel of D.U.T. for driver
Note
a. V
Note
D.U.T. V
Driver gate drive
D.U.T. l
Inductor current
GS
= - 5 V for logic level and - 3 V drive devices
P.W.
SD
DS
IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Body diode forward drop
Ripple ≤ 5 %
Period
Body diode forward
+
-
Fig. 14 - For P-Channel
• dV/dt controlled by R
• I
• D.U.T. - device under test
current
Diode recovery
SD
controlled by duty factor “D”
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
dV/dt
current transformer
dI/dt
D =
-
g
Period
P.W.
+
I
V
SD
V
GS
DD
= - 10 V
+
-
V
DD
a
Vishay Siliconix
www.vishay.com
7