IRFR9214TRLPBF Vishay, IRFR9214TRLPBF Datasheet - Page 5

P CHANNEL MOSFET, -250V, 2.7A D-PAK

IRFR9214TRLPBF

Manufacturer Part Number
IRFR9214TRLPBF
Description
P CHANNEL MOSFET, -250V, 2.7A D-PAK
Manufacturer
Vishay
Datasheet

Specifications of IRFR9214TRLPBF

Transistor Polarity
P Channel
Continuous Drain Current Id
-2.7A
Drain Source Voltage Vds
-250V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
-10V
Leaded Process Compatible
Yes
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohms
Drain-source Breakdown Voltage
- 250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.7 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
DPAK
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document Number: 91282
S10-1139-Rev. C, 17-May-10
Fig. 9 - Maximum Drain Current vs. Case Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
0.01
0.1
10
0.00001
1
50
D = 0.50
T , Case Temperature ( C)
C
0.20
0.10
0.05
0.02
0.01
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
(THERMAL RESPONSE)
100
0.0001
SINGLE PULSE
IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.001
0.01
10 %
90 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
1. Duty factor D = t / t
2. Peak T = P
Notes:
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
- 10 V
V
GS
t
d(on)
J
V
DM
DS
t
r
x Z
1
0.1
thJC
P
2
DM
D.U.T.
+ T
C
t
R
1
Vishay Siliconix
D
t
t
d(off)
2
t
f
+
-
www.vishay.com
V
1
DD
5

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