SMBT2222A Infineon Technologies, SMBT2222A Datasheet

TRANSISTOR, NPN, SOT-23

SMBT2222A

Manufacturer Part Number
SMBT2222A
Description
TRANSISTOR, NPN, SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of SMBT2222A

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
40V
Power Dissipation Pd
330mW
Dc Collector Current
600mA
Transistor Case Style
SOT-23
No. Of Pins
3
Collector Emitter Voltage Vces
300mV
Dc Current Gain Hfe
100
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Type
SMBT2222A/MMBT2222A s1P
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1 For calculation of R
NPN Silicon Switching Transistor
S
High DC current gain: 0.1 mA to 500 mA
Low collector-emitter saturation voltage
Complementary type: SMBT2907AW (PNP)
77 °C
thJA
please refer to Application Note Thermal Resistance
1)
Marking
1 = B
1
Pin Configuration
Symbol
V
V
V
I
P
T
T
Symbol
R
C
j
stg
CEO
CBO
EBO
tot
thJS
2 = E
SMBT2222A/MMBT2222A
3 = C
3
-65 ... 150
Value
Value
600
330
150
40
75
220
6
Package
SOT23
2006-05-12
1
Unit
V
mA
mW
°C
Unit
K/W
2

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SMBT2222A Summary of contents

Page 1

... NPN Silicon Switching Transistor High DC current gain: 0 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907AW (PNP) Type SMBT2222A/MMBT2222A s1P Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation °C S Junction temperature Storage temperature Thermal Resistance Parameter ...

Page 2

... Collector-emitter saturation voltage I = 150 mA 500 mA Base emitter saturation voltage I = 150 mA 500 mA Pulse test: t < 300µs; D < 25°C, unless otherwise specified A Symbol V (BR)CEO V (BR)CBO V (BR)EBO I CBO I EBO CEsat 1) V BEsat 2 SMBT2222A/MMBT2222A Values Unit min. typ. max µ 0. 100 - 300 0.3 ...

Page 3

... BE(off) Storage time 150 mA Fall time 150 mA Noise figure I = 100 µ kHz 200 Hz 25°C, unless otherwise specified A Symbol 11e h 12e h 21e h 22e mA mA stg = I = 15mA 15mA SMBT2222A/MMBT2222A Values Unit min. typ. max. 300 - - MHz - 2 0. 300 75 - 375 200 - - 225 - - 2006-05-12 ...

Page 4

... Test circuit Delay and rise time 9 Storage and fall time ~100 s < 16 -13.8 ~ 500 s Oscillograph: R > 100 , C < 12pF, t 200 619 0.5 V 200 -3.0 V < 5ns r 4 SMBT2222A/MMBT2222A 30 V Osc. EHN00055 30 V Osc. EHN00056 2006-05-12 ...

Page 5

... DC current gain SMBT 2222 150 ˚C 25 ˚ -50 ˚ Transition frequency SMBT 2222 MHz Saturation voltage EHP00743 Collector-base capacitance C C Emitter-base capacitance C EHP00741 SMBT2222A/MMBT2222A = (V C BEsat SMBT 2222 0.2 0.4 0.6 0 sat CEB 2006-05- CEsat EHP00742 V BE 1 sat = ( CCB ...

Page 6

... Delay time Rise time SMBT 2222 Permissible Pulse Load tot S P totmax P tot max P tot DC °C 90 105 120 150 T S Storage time t Fall time t EHP00744 SMBT2222A/MMBT2222A / totDC p SMBT 2222 stg SMBT 2222 EHP00740 0.005 0.01 0.02 0.05 0.1 0.2 0 EHP00745 2006-05-12 ...

Page 7

... Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0. Lead width can be 0.6 max. in dambar area 0.8 0.8 1.2 Manufacturer s EH 2005, June Date code (YM) Pin 1 BCW66 Type code 4 0.9 3.15 7 SMBT2222A/MMBT2222A 1 ±0.1 0.1 MAX 0.2 1.15 2006-05-12 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SMBT2222A/MMBT2222A 8 2006-05-12 ...

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