IXTT30N60L2 IXYS SEMICONDUCTOR, IXTT30N60L2 Datasheet
IXTT30N60L2
Specifications of IXTT30N60L2
Related parts for IXTT30N60L2
IXTT30N60L2 Summary of contents
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... DSS DS DSS 0.5 • 10V, I DS(on D25 © 2009 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 Maximum Ratings 600 = 1MΩ 600 GS ±20 ± 540 -55 to +150 +150 -55 to +150 300 260 1.13/10 6.0 5.5 4.0 Characteristic Values Min ...
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... C Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ 100V 710 R 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 TO-247 (IXTH) Outline Max Terminals Gate Source Dim. Millimeter nC Min. Max 4.7 A 2.2 0.23 ° ...
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... DS(on) vs. Junction Temperature 2.8 2 10V GS 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXTT30N60L2 15A Value 30A 15A D 75 100 125 150 75 100 125 150 IXYS REF: T_30N60L2(8R)01-20-09-A ...
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... C rss 0.001 IXTH30N60L2 IXTQ30N60L2 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 300V 15A 10mA 120 160 200 240 280 320 360 400 440 480 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXTT30N60L2 = - 40ºC 25ºC 125º 0 ...
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... DC 1000 IXTH30N60L2 IXTQ30N60L2 Fig. 14. Forward-Bias Safe Operating Area @ T = 75º Limit DS(on) 1 150º 75ºC C Single Pulse 0.1 10 100 V - Volts DS IXTT30N60L2 25µs 100µs 1ms 10ms 100ms DC 1000 IXYS REF: T_30N60L2(8R)01-20-09-A ...