BSP171PL6327 Infineon Technologies, BSP171PL6327 Datasheet - Page 3

• Manufacturer Part Number: BSP171PL6327
• Description: MOSFET, P, REEL 1K
• Manufacturer: Infineon Technologies

Specifications of BSP171PL6327

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.45A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 450mohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C
• Threshold Voltage Vgs Typ: 1.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev 2.3
2)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
See figure 16 for gate charge parameter definition
2)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
Q
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
plateau
SD
iss
oss
rss
gs
gd
g
oss
rr
V
V
V
V
I
V
V
V
T
V
T
V
di
D
A
j
GS
DS
DD
GS
DD
GS
DD
GS
R
=-1.9 A, R
=25 °C
F
page 3
=25 °C
=-30 V, I
/dt =100 A/µs
=-25 V, f =1 MHz
=0 V,
=-25 V,
=-10 V,
=-48 V, I
=0 to -10 V
=-15 V, V
=0 V, I
F
=1.9 A,
F
G
=|I
D
=6
GS
=1.9 A,
S
=0 V
|,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-0.84
-125
typ.
365
105
208
-1.2
-13
40
25
87
80
-5
-3
-5
6
-
-
max.
-190
460
135
276
130
-1.6
-1.9
-7.6
-1.1
120
-20
55
33
-7
-7
8
-
BSP171P
2005-11-29
Unit
pF
ns
nC
V
A
V
ns
nC