IXFT26N60P IXYS SEMICONDUCTOR, IXFT26N60P Datasheet
IXFT26N60P
Manufacturer Part Number
IXFT26N60P
Description
MOSFET, N, TO-268
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFT26N60P.pdf
(5 pages)
Specifications of IXFT26N60P
Transistor Polarity
N Channel
Continuous Drain Current Id
26A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
270mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
30V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFT26N60P
Manufacturer:
IXYS
Quantity:
15 500
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AR
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-3P&TO-247)
Mounting force (PLUS220)
TO-247
TO-268
PLUS220 & PLUS220SMD
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
≤ I
GS
= 25°C to 150°C; R
= 25°C to 150°C
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 25°C
≤ 150°C, R
TM
DM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
, di/dt ≤ 100 A/μs, V
GS
DSS
, I
D
D
D
= 250 μA
= 4 mA
G
= 0.5 I
DS
= 5 Ω
= 0 V
D25
GS
= 1 MΩ
DD
≤ V
T
J
= 125°C
DSS
JM
IXFH26N60P
IXFT26N60P
IXFV26N60P
IXFV26N60PS
600
Min.
2.5
11..65/2.5..15
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
600
600
±30
±40
460
150
300
260
1.2
6.0
5.0
4.0
26
65
13
40
10
±100
250
270
Max.
5.0
25
V/ns
N/lb
mΩ
mJ
° C
° C
μA
μA
nA
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
g
J
TO-268 (IXFT)
TO-247 (IXFH)
PLUS220 (IXFV)
PLUS220SMD (IXFV...S)
G = Gate
S = Source
Features
Advantages
Fast Recovery diode
Unclamped Inductive Switching (UIS)
rated
International standard packages
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
DS(on)
DSS
G
G
G
D
D
G
S
S
S
= 600
= 26
≤ ≤ ≤ ≤ ≤ 270 mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 200
S
D = Drain
TAB = Drain
D (TAB)
DS99435E(12/06)
D (TAB)
ns
A
V
D (TAB)
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IXFT26N60P Summary of contents
Page 1
... V GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS Maximum Ratings 600 = 1 MΩ 600 GS ±30 ± 1.2 ≤ DSS 460 -55 ... +150 150 -55 ... +150 300 260 1 ...
Page 2
Symbol Test Conditions iss C V oss C rss t d(on d(off g(on thJC R (PLUS220 & TO-247) thCs Source-Drain Diode Symbol ...
Page 3
Fig. 3. Output Characteristics @ 125 Volts D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 3.2 V ...
Page 4
Fig. 9. Source Current vs. Source-To-Drain Voltage º 125 0.4 0.5 0.6 0 Volts S D Fig. 11. Capacitance 10000 f = 1MHz C iss ...
Page 5
TO-247 AD (IXFH) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 ...