ATF-38143-TR1 Avago Technologies US Inc., ATF-38143-TR1 Datasheet - Page 4

• Manufacturer Part Number: ATF-38143-TR1
• Description: TRANSISTOR,HEMT,N-CHAN,4.5V V(BR)DSS,90mA I(DSS),SOT-343R
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-38143-TR1

• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ATF-38143 Typical Performance Curves
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2 V
2. P
Figure 6. OIP3 and P
2 GHz.
Figure 9. Noise Figure vs. I
900 MHz.
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10 mA bias. This circuit represents a trade-off between an optimal noise match, maximum gain match and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
is running closer to class B as power output approaches P
when compared to a device that is driven by a constant current source as is typically done with active biasing.
30
25
20
15
10
5
0
0
1dB
0
0
measurements are performed with passive biasing. Quiescent drain current, I
10
10
OIP3
CURRENT, I
CURRENT, I
20
20
30
30
P
1dB
DS
1dB
DS
(mA)
(mA)
40
40
vs. I
d
d
at 2V,
50
50
at 2V,
60
60
Figure 10. Associated Gain vs. I
2 GHz.
Figure 7. OIP3 and P
900 MHz.
22
21
20
19
18
17
16
30
25
20
15
10
15
5
0
0
0
10
10
1dB
CURRENT, I
CURRENT, I
. This results in higher P
20
20
OIP3
30
30
P
1dB
DS
DS
1dB
(mA)
(mA)
40
40
vs. I
d
50
50
at 2V,
DSQ
d
at 2V,
60
60
1dB
, is set with zero RF drive applied. As P
and higher PAE (power added efficiency)
Figure 8. Noise Figure vs. I
2 GHz.
Figure 11. Associated Gain vs. I
900 MHz.
0.7
0.6
0.5
0.4
0.3
0.2
0.1
4
22
21
20
19
18
17
16
15
0
0
0
10
10
CURRENT, I
CURRENT, I
20
20
30
30
DSQ
DS
DS
(mA)
(mA)
40
40
the device
1dB
d
50
at 2V,
50
is
d
at 2V,
60
60