ATF-38143-TR1 Avago Technologies US Inc., ATF-38143-TR1 Datasheet - Page 7

• Manufacturer Part Number: ATF-38143-TR1
• Description: TRANSISTOR,HEMT,N-CHAN,4.5V V(BR)DSS,90mA I(DSS),SOT-343R
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-38143-TR1

• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ATF-38143 Typical Scattering Parameters,
Notes:
1. F
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
ATF-38143 Typical Noise Parameters
V
DS
(GHz)
Freq.
Freq.
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
these measurements a true F
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
10.0
GHz
= 2 V, I
0.5
0.8
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
min
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From
DS
Mag.
0.97
0.93
0.91
0.83
0.78
0.76
0.71
0.68
0.65
0.65
0.66
0.68
0.71
0.73
0.75
0.79
0.82
0.84
0.85
0.87
0.88
0.88
0.89
= 10 mA
0.18
0.19
0.20
0.23
0.25
0.28
0.32
0.39
0.52
0.65
0.75
0.84
0.95
1.10
1.20
F
dB
min
S
11
-100
-109
-131
-150
Ang.
180
153
129
107
-29
-47
-58
-85
-18
-31
-41
-51
87
68
53
36
20
-4
Mag.
8
0.66
0.64
0.63
0.60
0.57
0.56
0.54
0.52
0.44
0.44
0.45
0.48
0.51
0.55
0.56
min
is calculated. Refer to the noise parameter application section for more information.
Γ
17.41
17.00
16.69
15.69
15.02
14.57
13.38
12.22
10.24
-0.93
-2.24
-3.45
-4.63
-5.81
-7.27
dB
8.68
7.35
6.03
4.72
3.57
2.71
1.61
0.47
opt
-165
-135
-106
Ang.
129
166
-84
-65
13
22
26
43
60
67
81
98
7.081
6.834
6.086
5.634
5.350
4.665
4.083
3.251
2.716
2.330
2.003
Mag.
7.423
1.722
1.509
1.366
1.204
1.055
0.898
0.773
0.672
0.587
0.512
0.433
S
21
V
R
0.17
0.16
0.15
0.14
0.12
0.12
0.10
0.08
0.04
0.08
0.16
0.29
0.46
0.06
0.04
DS
n/50
-110
-125
-153
-167
-179
-140
-
Ang.
158
145
136
117
107
100
= 2 V, I
-27
-43
-60
-78
-94
86
73
50
30
11
-9
DS
-27.74
-24.01
-22.50
-20.00
-19.17
-18.71
-17.99
-17.65
-17.27
-17.08
-16.95
-16.95
-17.27
-17.46
-17.27
-17.39
-17.65
-18.34
-18.86
-19.17
-19.49
-19.74
-20.54
24.1
21.0
20.4
17.9
17.0
16.1
15.2
13.9
11.9
10.8
9.6
8.7
7.7
7.0
6.8
= 10 mA
dB
dB
G
a
Mag.
0.041
0.063
0.075
0.100
0.110
0.116
0.126
0.131
0.137
0.140
0.142
0.142
0.137
0.134
0.137
0.135
0.131
0.121
0.114
0.110
0.106
0.103
0.094
S
12
Figure 19. MSG/MAG and |S
Frequency at 2 V, 10 mA.
-10
25
20
15
10
-5
5
0
-104
-112
-122
-131
-141
-148
Ang.
-18
-30
-42
-53
-62
-72
-83
-94
0
72
61
55
40
33
28
18
-5
9
2
MSG
4
FREQUENCY (GHz)
Mag.
7
0.53
0.51
0.48
0.42
0.39
0.37
0.33
0.31
0.28
0.28
0.28
0.29
0.32
0.35
0.40
0.45
0.50
0.54
0.59
0.63
0.67
0.70
0.74
6
S
21
8
S
10 12
22
-114
-132
-163
Ang.
172
147
122
-26
-40
-50
-72
-85
-94
-19
-32
-41
MAG
99
83
70
52
35
17
-8
2
14 16
21
|
2
vs.
MSG/MAG
18
22.58
20.51
19.60
17.84
17.09
16.64
15.68
14.94
13.75
12.88
12.15
11.49
(dB)
9.09
7.94
7.55
7.27
6.84
5.72
4.77
4.42
3.85
3.03
2.34