ATF-38143-TR1 Avago Technologies US Inc., ATF-38143-TR1 Datasheet - Page 5

• Manufacturer Part Number: ATF-38143-TR1
• Description: TRANSISTOR,HEMT,N-CHAN,4.5V V(BR)DSS,90mA I(DSS),SOT-343R
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-38143-TR1

• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ATF-38143 Typical Performance Curves,
Notes:
1. P
Figure 15. P
and Temperature at 2V, 10 mA.
Figure 12. F
Current at 2V.
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
is running closer to class B as power output approaches P
when compared to a device that is driven by a constant current source as is typically done with active biasing.
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
26
24
22
20
18
16
14
12
10
1dB
0
0
0
measurements are performed with passive biasing. Quiescent drain current, I
2000
1dB
2
min
FREQUENCY (GHz)
FREQUENCY (MHz)
and OIP3 vs. Frequency
vs. Frequency and
4000
4
6000
6
10 mA
20 mA
–40 C
+25 C
+85 C
5 mA
8000
8
Figure 13. F
and Temperature at 2V, 10 mA.
Figure 16. NF, Gain, P
I
DS
30
25
20
15
10
30
25
20
15
10
5
0
5
0
0
0
at 2V, 3.9 GHz.
continued
1
10
G
a
CURRENT, I
FREQUENCY (GHz)
min
2
1dB
20
. This results in higher P
and G
3
30
DS
4
a
F
1dB
vs. Frequency
min
(mA)
40
5
and OIP3 vs.
50
–40 C
+25 C
+85 C
6
P
OIP3
Gain
NF
1dB
60
7
DSQ
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1dB
, is set with zero RF drive applied. As P
and higher PAE (power added efficiency)
Figure 17. NF, Gain, P
I
Figure 14. Associated Gain vs.
Frequency and Current at 2V.
DS
30
25
20
15
10
30
25
20
15
10
5
0
5
0
0
0
at 2V, 5.8 GHz.
5
10
2
10 mA
20 mA
5 mA
FREQUENCY (GHz)
CURRENT, I
20
4
30
6
DS
1dB
(mA)
40
8
DSQ
and OIP3 vs.
10
50
the device
P
OIP3
Gain
NF
1dB
1dB
60
is
12
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0