SEMIX302KH16S SEMIKRON, SEMIX302KH16S Datasheet

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SEMIX302KH16S

Manufacturer Part Number
SEMIX302KH16S
Description
Thyristor Module
Manufacturer
SEMIKRON
Datasheet

Specifications of SEMIX302KH16S

Family/system
SEMiX
Voltage (v)
1600
Current (a)
300
Case
SEMiX 2s
Switches
2
SEMiX302KH16s
Rectifier Thyr./Diode Module
SEMiX302KH16s
Features
• Terminal height 17 mm
• Chips soldered directly to isolated
Typical Applications*
• Input Bridge Rectifier for AC/DC motor
• Power supply
© by SEMIKRON
SEMiX
substrate
control
®
2s
KH
Absolute Maximum Ratings
Symbol
Chip
I
I
i
V
V
V
(di/dt)
(dv/dt)
T
Module
T
V
Characteristics
Symbol
Chip
V
V
r
I
t
t
t
I
I
V
I
V
I
R
R
R
Module
R
M
M
a
w
T(AV)
TSM
2
DD
H
L
GT
GD
gd
gr
q
T
t
RSM
RRM
DRM
j
stg
isol
T
T(TO)
GT
GD
th(j-c)
th(j-c)
th(j-c)
th(c-s)
s
t
;I
RD
cr
cr
Rev. 0 – 07.10.2011
sinus 180°
10 ms
10 ms
T
T
AC sinus 50Hz
T
T
T
T
T
T
T
T
T
T
T
sin. 180°
Conditions
Conditions
T
V
per chip
per module
to heat sink (M5)
to terminals (M6)
j
j
j
j
j
j
j
j
j
j
j
j
j
j
D
= 130 °C
= 130 °C
= 25 °C, I
= 130 °C
= 130 °C
= 25 °C, I
= 130 °C
= 25 °C
= 25 °C, R
= 25 °C, d.c.
= 25 °C, d.c.
= 130 °C, d.c.
= 130 °C, d.c.
= 130 °C, V
= 0.67 * V
T
G
G
= 900 A
DRM
= 1 A, di
DD
= 33 
= V
T
T
T
T
T
T
1 min
1 s
per thyristor
per module
per thyristor
per module
per thyristor
per module
DRM
c
c
j
j
j
j
G
= 25 °C
= 130 °C
= 25 °C
= 130 °C
= 85 °C
= 100 °C
/dt = 1 A/µs
; V
RD
= V
RRM
min.
200
2.5
3
3
-40 ... 130
-40 ... 125
Values
432000
320000
0.045
9300
8000
1700
1600
1600
1000
4000
4800
typ.
300
230
130
150
150
300
250
1
2
5 * 9,81
max.
0.091
0.091
1000
0.85
0.25
500
1.7
1.1
75
10
5
5
Unit
A/µs
V/µs
Unit
m/s²
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
A²s
A²s
m
Nm
Nm
mA
mA
mA
mA
mA
°C
°C
µs
µs
µs
A
A
A
A
V
V
V
V
V
V
V
V
V
g
1

Related parts for SEMIX302KH16S

SEMIX302KH16S Summary of contents

Page 1

... SEMiX302KH16s SEMiX ® 2s Rectifier Thyr./Diode Module SEMiX302KH16s Features • Terminal height 17 mm • Chips soldered directly to isolated substrate Typical Applications* • Input Bridge Rectifier for AC/DC motor control • Power supply KH © by SEMIKRON Absolute Maximum Ratings Symbol Conditions Chip °C ...

Page 2

... SEMiX302KH16s Fig. 1L: Power dissipation per thyristor/diode vs. on-state current Fig. 2L: Power dissipation of one module vs. rms current Fig. 3L: Power dissipation of two modules vs. direct current 2 Fig. 1R: Power dissipation per thyristor/diode vs. ambient temperature Fig. 2R: Power dissipation of one module vs. case temperature Fig. 3R: Power dissipation of two modules vs. case temperature Rev. 0 – ...

Page 3

... SEMiX302KH16s Fig. 4L: Power dissipation of three modules vs. direct current Fig. 5: Recovered charge vs. current decrease Fig. 7: On-state characteristics © by SEMIKRON Fig. 4R: Power dissipation of three modules vs. case temperature Fig. 6: Transient thermal impedance vs. time Fig. 8: Surge overload current vs. time Rev. 0 – 07.10.2011 3 ...

Page 4

... SEMiX302KH16s Fig. 9: Gate trigger characteristics SEMiX 2s This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON ...

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