SI5499DC-T1-E3 Vishay, SI5499DC-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI5499DC-T1-E3
• Description: TRANSISTOR,MOSFET,P-CHANNEL,8V V(BR)DSS,6A I(D),LLCC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5499DC-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 5.1A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 8V
• Input Capacitance (ciss) @ Vds: 1290pF @ 4V
• Power - Max: 6.2W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.036 Ohms
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: +/- 5 V
• Continuous Drain Current: 6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5499DC-T1-E3TR

Si5499DC
Vishay Siliconix
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 95 °C/W.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
a
a
J
a, b
= 25 °C, unless otherwise noted
a
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
t
t
I
C
V
I
DS(on)
C
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
d(on)
d(off)
GSS
DSS
DS
Q
g
R
oss
t
t
t
t
DS
rss
iss
fs
gs
gd
r
f
r
f
g
g
/T
/T
J
J
Steady State
I
V
D
I
V
D
V
V
DS
≅ - 5.6 A, V
DS
DS
DS
t ≤ 5 s
≅ - 5.6 A, V
= - 4 V, V
V
V
V
V
V
= - 8 V, V
= - 4 V, V
V
V
= - 4 V, V
V
V
V
V
V
DS
V
GS
GS
GS
GS
GS
DS
DS
DS
DS
DD
DD
DS
Test Conditions
= V
= - 4.5 V, I
= - 2.5 V, I
= - 1.8 V, I
= - 1.5 V, I
≤ 5 V, V
= 0 V, I
= V
= - 4 V, I
= 0 V, V
= - 4 V, R
= - 4 V, R
I
= - 8 V, V
D
f = 1 MHz
GS
GEN
= - 250 µA
GS
GEN
GS
GS
GS
GS
, I
, I
= - 4.5 V, I
D
D
= 0 V, T
= - 8 V, I
= - 4.5 V, R
GS
= 0 V, f = 1 MHz
D
GS
= - 8 V, R
D
Symbol
= - 250 µA
= - 250 µA
D
D
D
D
L
L
GS
= - 5 mA
R
R
= - 5.1 A
= - 4.5 V
= - 5.1 A
= - 4.6 A
= - 4.3 A
= - 1.3 A
= ± 5 V
= 0.7 Ω
= 0.7 Ω
thJA
thJF
= 0 V
J
D
= 55 °C
D
= - 6 A
g
= - 6 A
g
= 1 Ω
= 1 Ω
Typical
48
17
- 0.35
Min.
- 25
- 8
- 0.55
Maximum
0.030
0.037
0.046
0.057
1290
Typ.
420
270
2.3
1.7
2.7
18
23
14
10
70
60
30
70
55
55
6
8
8
S-83054-Rev. C, 29-Dec-08
50
20
Document Number: 73321
± 100
0.036
0.045
0.056
0.077
Max.
- 0.8
- 10
110
110
- 1
35
21
15
90
45
15
85
85
°C/W
Unit
mV/°C
Unit
nA
µA
pF
nC
ns
Ω
Ω
V
V
A
S