SI5499DC-T1-E3 Vishay, SI5499DC-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI5499DC-T1-E3
• Description: TRANSISTOR,MOSFET,P-CHANNEL,8V V(BR)DSS,6A I(D),LLCC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5499DC-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 5.1A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 8V
• Input Capacitance (ciss) @ Vds: 1290pF @ 4V
• Power - Max: 6.2W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.036 Ohms
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: +/- 5 V
• Continuous Drain Current: 6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5499DC-T1-E3TR

Si5499DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
25
20
15
10
On-Resistance vs. Drain Current and Gate Voltage
5
0
8
7
6
5
4
3
2
1
0
0.0
0
0
V
I
D
GS
= 6 A
= 1.5 V
5
5
V
0.5
DS
Output Characteristics
Q
V
g
-
DS
Drain-to-Source Voltage (V )
I
-
D
Total Gate Charge (nC)
- Drain Current (A)
= 4 V
Gate Charge
10
10
1.0
V
V
15
DS
15
GS
V
= 5.6 V
= 5 thru 2.5 V
GS
V
V
GS
= 1.8 V
1.5
GS
= 2.5 V
= 4.5 V
20
20
1.5 V
1 V
2 V
2.0
25
25
2000
1600
1200
800
400
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
10
8
6
4
2
0
0
- 50
0.0
0
I
D
On-Resistance vs. Junction Temperature
= 5.1 A
C
- 25
rss
1
0.3
V
V
Transfer Characteristics
T
GS
DS
2
0
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
V
Capacitance
oss
25
C
3
GS
0.6
iss
25 °C
= 4.5 V
T
50
S-83054-Rev. C, 29-Dec-08
4
C
Document Number: 73321
= 125 °C
0.9
75
5
100
- 55 °C
6
1.2
125
7
150
1.5
8