SI5499DC-T1-E3 Vishay, SI5499DC-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI5499DC-T1-E3
• Description: TRANSISTOR,MOSFET,P-CHANNEL,8V V(BR)DSS,6A I(D),LLCC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5499DC-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 5.1A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 8V
• Input Capacitance (ciss) @ Vds: 1290pF @ 4V
• Power - Max: 6.2W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.036 Ohms
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: +/- 5 V
• Continuous Drain Current: 6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5499DC-T1-E3TR

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73321
S-83054-Rev. C, 29-Dec-08
SPECIFICATIONS T
Parameter
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
J
= 25 °C, unless otherwise noted
Symbol
V
I
Q
I
SM
t
t
t
SD
S
rr
a
b
rr
I
F
= - 5.6 A, dI/dt = 100 A/µs, T
I
S
= - 2.1 A, V
Test Conditions
T
C
= 25 °C
GS
= 0 V
J
= 25 °C
Min.
Typ.
- 0.7
45
18
18
17
Vishay Siliconix
Si5499DC
Max.
- 1.2
- 25
- 6
70
27
www.vishay.com
Unit
nC
ns
ns
A
V
3