BPX 43-4 OSRAM Opto Semiconductors Inc, BPX 43-4 Datasheet - Page 3

• Manufacturer Part Number: BPX 43-4
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 43-4

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 100 nA
• Fall Time: 15 us
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 15 us
• Package / Case: TO-18
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.24V
• Dark Current (max): 100nA
• Light Current: 9.5mA
• Power Dissipation: 220mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 30deg
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0016S004

Kennwerte (
Characteristics
Bezeichnung
Parameter
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
Spectral range of sensitivity
S
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessung der Chipfläche
Dimensions of chip area
Halbwinkel
Half angle
Fotostrom der Kollektor-Basis-Fotodiode
Photocurrent of collector-base photodiode
E
E
V
Kapazität
Capacitance
V
V
V
Dunkelstrom
Dark current
V
2007-04-02
e
v
CB
CE
CB
EB
CE
= 10% von
= 10% of
= 1000 Ix, Normlicht/standard light A,
= 0.5 mW/cm
= 0 V,
= 5 V
= 0 V,
= 0 V,
= 25 V,
f
f
f
S
= 1 MHz,
= 1 MHz,
= 1 MHz,
E
max
T
S
= 0
A
max
= 25 °C, λ = 950 nm)
2
,
V
CB
E
E
E
= 5 V
= 0
= 0
= 0
Symbol
Symbol
λ
λ
A
L
L
ϕ
I
I
C
C
C
I
PCB
PCB
CEO
3
S max
CE
CB
EB
×
×
B
W
Wert
Value
880
450 … 1100
0.675
1 × 1
± 15
11
35
23
39
47
20 (≤ 100)
Einheit
Unit
nm
nm
mm
mm × mm
Grad
deg.
μA
μA
pF
pF
pF
nA
2
BPX 43