BPX 43-4 OSRAM Opto Semiconductors Inc, BPX 43-4 Datasheet - Page 7

• Manufacturer Part Number: BPX 43-4
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 43-4

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 100 nA
• Fall Time: 15 us
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 15 us
• Package / Case: TO-18
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.24V
• Dark Current (max): 100nA
• Light Current: 9.5mA
• Power Dissipation: 220mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 30deg
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0016S004

Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch)
2007-04-02
ø0.45 (0.018)
14.5 (0.571)
12.5 (0.492)
Chip position
(2.7 (0.106))
5.1 (0.201)
4.8 (0.189)
6.2 (0.244)
5.4 (0.213)
Radiant
sensitive area
7
E C B
ø5.6 (0.220)
ø5.3 (0.209)
GMOY6019
BPX 43