BPX 43-4 OSRAM Opto Semiconductors Inc, BPX 43-4 Datasheet - Page 5

• Manufacturer Part Number: BPX 43-4
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 43-4

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 100 nA
• Fall Time: 15 us
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 15 us
• Package / Case: TO-18
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.24V
• Dark Current (max): 100nA
• Light Current: 9.5mA
• Power Dissipation: 220mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 30deg
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0016S004

Relative Spectral Sensitivity
S
Output Characteristics
I
Photocurrent
I
2007-04-02
C
PCE
rel
=
=
/
f
I
PCE25
f
(
V
(λ)
CE
),
o
=
I
B
f
= Parameter
(
T
A
),
V
CE
= 5 V
Photocurrent
I
Output Characteristics
I
Dark Current
I
PCE
C
CEO
=
/
=
f
I
CEO25
(
f
V
(
CE
E
e
),
o
),
=
I
V
B
f
CE
= Parameter
(
T
A
= 5 V
),
5
V
CE
= 25 V,
E
= 0
Total Power Dissipation
P
Dark Current
I
Collector-Emitter Capacitance
C
CEO
tot
CE
=
=
=
f
f
f
(
(
T
(
V
V
A
CE
CE
)
),
),
f
E
= 1 MHz,
= 0
E
BPX 43
= 0