FF150R12YT3 Infineon Technologies, FF150R12YT3 Datasheet - Page 4

• Manufacturer Part Number: FF150R12YT3
• Description: IGBT Modules N-CH 1.2KV 200A
• Manufacturer: Infineon Technologies

Specifications of FF150R12YT3

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 200 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EASY2
• Ic (max): 150.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EasyDUAL 2

Technische Information / technical information
IGBT-Module
IGBT-modules
3. * V-./X
3. * V-./X
-A/ * + -
-A/ * + -
b
b
3. * V-A/X
3. * V-A/X
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b
b
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3. * V-A/X
-./ *
-./ *
&
&
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300
270
240
210
180
150
120
300
270
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180
150
120
90
60
30
90
60
30
0
0
0,0
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V
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FF150R12YT3
2,5
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%
%
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$54 * V3.X2 $5[[ * V3.X
$54 * V3.X2 $5[[ * V3.X
$54 * V3.X2 $5[[ * V3.X
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-A/ * Y + -2 NA54 * 2L P2 NA5[[ * 2L P2 -./ *
-A/ * Y + -2 NA54 * 2L P2 NA5[[ * 2L P2 -./ *
-A/ * Y + -2 NA54 * 2L P2 NA5[[ * 2L P2 -./ *
>
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270
240
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180
150
120
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60
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40
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25
20
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-A/ * <-
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Vorläufige Daten
preliminary data
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V
V
V
X
X
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200
X
X
X
X
" V
" V
" V
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X
X
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250
X
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-
-
-
-
300