BSM75GD60DLC Infineon Technologies, BSM75GD60DLC Datasheet - Page 7

• Manufacturer Part Number: BSM75GD60DLC
• Description: IGBT Modules 600V 75A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of BSM75GD60DLC

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.2 V
• Continuous Collector Current At 25 C: 95 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 330 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,01
0,1
1
0,001
175
150
125
100
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
75
50
25
0
Transienter Wärmewiderstand
Transient thermal impedance
0
r
r
i
i
[K/kW]
i
[K/kW]
i
[sec]
[sec]
i
100
: IGBT
: IGBT
: Diode
: Diode
0,01
BSM 75 GD 60 DLC
200
IC,Modul
IC,Chip
0,0020
0,0980
257,3
15,7
1
7 (8)
300
0,1
V
0,0240
0,0340
193,9
246,7
CE
400
2
t [sec]
[V]
Z
V
thJC
GE
= +15V, R
= f (t)
500
0,0651
0,1069
130,4
155,0
G,off
1
3
Zth:IGBT
Zth:Diode
= 3,0 , T
600
vj
= 125°C
0,6626
0,9115
30,0
71,1
4
BSM 75 GD 60 DLC
700
10