BSM150GB170DL Infineon Technologies, BSM150GB170DL Datasheet - Page 2

• Manufacturer Part Number: BSM150GB170DL
• Description: IGBT Modules N-CH 1.7KV 300A
• Manufacturer: Infineon Technologies

Specifications of BSM150GB170DL

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 300 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Collector Current (dc) (max): 300A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / Rohs Status: Compliant

Kollektor-Emitter-Sperrspannung
Kollektor-Dauergleichstrom
Periodischer Kollektor Spitzenstrom
Gesamt-Verlustleistung
Gate-Emitter-Spitzenspannung
Dauergleichstrom
Periodischer Spitzenstrom
Grenzlastintegral der Diode
Isolations-Prüfspannung
Kollektor-Emitter Sättigungsspannung
Gate-Schwellenspannung
Eingangskapazität
Kollektor-Emitter Reststrom
Gate-Emitter Reststrom
Einschaltverzögerungszeit (induktive Last)
Anstiegszeit (induktive Last)
Abschaltverzögerungszeit (ind. Last)
Fallzeit (induktive Last)
Einschaltverlustenergie pro Puls
Abschaltverlustenergie pro Puls
Kurzschlußverhalten
Modulinduktivität
Durchlaßspannung
Rückstromspitze
Sperrverzögerungsladung
Abschaltenergie pro Puls
Innerer Wärmewiderstand
Übergangs-Wärmewiderstand
Höchstzul. Sperrschichttemperatur
Betriebstemperatur
Lagertemperatur
Innere Isolation
Kriechstrecke
Luftstrecke
CTI
Anzugsdrehmoment f. mech. Befestigung
Anzugsdrehmoment f. elektr. Anschlüsse
Gewicht
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values: Transistor
Charakteristische Werte / Characteristic values: Diode
Thermische Eigenschaften / Thermal properties
Mechanische Eigenschaften / Mechanical properties
BSM 150 GB 170 DL
collector-emitter voltage
DC-collector current
repetitive peak collector current
total power dissipation
gate-emitter peak voltage
DC forward current
repetitive peak forw. current
I
insulation test voltage
collector-emitter saturation voltage
gate threshold voltage
input capacitance
collector-emitter cut-off current
gate-emitter leakage current
turn-on delay time (inductive load)
rise time (inductive load)
turn off delay time (inductive load)
fall time (inductive load)
turn-on energy loss per pulse
turn-off energy loss per pulse
SC Data
stray inductance module
forward voltage
peak reverse recovery current
recovered charge
reverse recovery energy
thermal resistance, junction to case
thermal resistance, case to heatsink
max. junction temperature
operating temperature
storage temperature
internal insulation
creepage distance
clearance
comperative tracking index
mounting torque
terminal connection torque
weight
2
t - value, Diode
T
T
t
T
t
V
RMS, f = 50 Hz, t = 1 min.
I
I
I
f = 1MHz,T
V
V
V
I
V
V
I
V
V
I
V
V
I
V
V
I
R
I
R
t
T
I
I
I
V
V
I
V
V
I
V
V
Transistor / transistor, DC
Diode / diode, DC
pro Module / per Module
d
terminals M6
p
p
C
C
C
C
C
C
C
C
C
P
V
F
F
F
F
F
Paste
C
C
C
R
CE
CE
CE
GE
GE
GE
GE
GE
GE
GE
GE
Vj
R
R
R
R
R
R
G
G
= 1 ms, T
= 1 ms
CEmax
= 150A, V
= 150A, V
= 150A, - di
= 150A, - di
= 150A, - di
= 150A, V
= 150A, V
= 7mA, V
= 150A, V
= 150A, V
= 150A, V
= 150A, V
= 150A, V
= 150A, V
= 80°C
= 25°C
= 25°C, Transistor
= 0V, t
= 10 , T
= 10 , T
= 900V, V
= 900V, V
= 900V, V
= 900V, V
= 900V, V
= 900V, V
125°C, V
= 1700V, V
= 1700V, V
= 0V, V
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
10µsec, V
=V
50µm / d
p
CES
vj
= 10ms, T
CE
GE
C
GE
GE
GE
GE
CE
CE
CE
CE
CE
vj
CE
vj
= 25°C,V
CC
GE
GE
GE
GE
GE
GE
= 80°C
-L
F
F
F
= 125°C, L
= 125°C, L
= V
GE
= 20V, T
/dt = 2250A/µsec
/dt = 2250A/µsec
/dt = 2250A/µsec
= 900V
= 900V
= 900V
= 900V
= 900V, V
= 900V, V
= 0V, T
= 0V, T
= 15V, T
= 15V, T
G
G
G
G
G
G
G
G
=1000V
GE
GE
sCE
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= 10 , T
= 10 , T
= 10 , T
= 10 , T
grease
= 10 , T
= 10 , T
= 10 , T
= 10 , T
GE
= 0V, T
= 0V, T
15V, R
x dI/dt
, T
Vj
CE
vj
vj
vj
vj
= 125°C
vj
vj
50µm
= 25°C
= 125°C
= 25°C
= 25V, V
= 25°C
GE
S
GE
S
= 25°C
= 125°C
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
G
= 60nH
= 60nH
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= 125°C
= 125°C
= 125°C
= 15V
= 15V
= 10
GE
= 0V
V
I
I
I
P
V
I
I
I
V
v
v
C
I
I
t
t
t
t
E
E
I
L
V
I
Q
E
R
R
T
T
T
max.
max.
G
C,nom.
C
CRM
F
FRM
2
CES
GES
d,on
r
d,off
f
SC
RM
CE sat
GE(th)
sCE
t
CES
tot
GES
ISOL
ies
on
off
F
rec
thJC
thCK
vj
op
stg
r
min.
-40
-40
4,5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
vorläufige Daten
preliminary data
0,05
0,03
0,03
600
110
165
typ.
2,7
3,2
5,5
0,1
0,1
0,1
0,1
0,8
0,9
2,2
10
70
46
30
17
38
15
4
2
8
-
-
-
-
-
-
-
0,012 K/W
Al
1700 V
1250 W
7200 A
max.
± 20 V
0,24 K/W
150 A
300 A
300 A
150 A
300 A
200 nA
150 °C
125 °C
125 °C
420 g
2
3,4 kV
3,3 V
6,5 V
0,3 mA
2,6 V
0,1 K/W
O
20 mm
11 mm
5 Nm
5 Nm
- V
- nF
- mA
- µs
- µs
- µs
- µs
- µs
- µs
- µs
- µs
- mWs
- mWs
- A
- nH
- V
- A
- A
- µAs
- µAs
- mWs
- mWs
3
2
s