SKB02N120 Infineon Technologies, SKB02N120 Datasheet - Page 10

• Manufacturer Part Number: SKB02N120
• Description: IGBT Transistors FAST IGBT NPT TECH 1200V 2A
• Manufacturer: Infineon Technologies

Specifications of SKB02N120

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-263-3
• Continuous Collector Current Ic Max: 6.2 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 6.2 A
• Ic(max) @ 100°: 2.8 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKB02N120XT

Power Semiconductors
Figure 25. Typical diode forward current as
a function of forward voltage
10
10
Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = t
10
7A
6A
5A
4A
3A
2A
1A
0A
-1
-2
0
0V
K/W
K/W
K/W
1µs
p
/ T)
0.2
0.1
0.05
D =0.5
single pulse
10µs
V
1V
F
,
t
FORWARD VOLTAGE
p
,
100µs
PULSE WIDTH
T
J
=150°C
2V
0.10109
0.99478
1.07923
1.94890
R
R , ( K / W )
1ms
1
C
1
=
1
/ R
T
10ms 100ms
J
1
=25°C
3V
C
0.38953
0.04664
0.00473
0.00066
2
=
, ( s )
2
/R
R
2
2
4V
1s
10
Figure 26. Typical diode forward voltage as
a function of junction temperature
3.0V
2.5V
2.0V
1.5V
1.0V
0.5V
0.0V
0°C
T
j
,
JUNCTION TEMPERATURE
40°C
SKB02N120
80°C
Rev. 2.3
120°C
I
F
I
=1A
I
F
F
=2A
=4A
Oct 07