AM29LV160DT-120EC Spansion Inc., AM29LV160DT-120EC Datasheet

AM29LV160DT-120EC

Manufacturer Part Number

AM29LV160DT-120EC

Description

Flash Memory IC

Manufacturer

Spansion Inc.

Datasheets

1.AM29LV160DT-70EI.pdf (49 pages)

2.AM29LV160DT-70EC.pdf (49 pages)

3.AM29LV160DT-120EC.pdf (52 pages)

Specifications of AM29LV160DT-120EC

Memory Configuration

2M X 8 / 1M X 16 Bit

Package/case

48-TSOP

Supply Voltage Max

3.6V

Leaded Process Compatible

Peak Reflow Compatible (260 C)

Access Time, Tacc

120nS

Mounting Type

Surface Mount

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

AM29LV160DT-120EC

Manufacturer:

AMD

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AM29LV160DT-120EC/T

Manufacturer:

AMD

Quantity:

17 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

AM29LV160DT-120EC/T

Manufacturer:

AMD

Quantity:

20 000

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Am29LV160D

16 Megabit (2 M x 8-Bit/1 M x 16-Bit)

CMOS 3.0 Volt-only Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Single power supply operation

— Full voltage range: 2.7 to 3.6 volt read and write

— Regulated voltage range: 3.0 to 3.6 volt read and

Manufactured on 0.23 µm process technology

— Fully compatible with 0.32 µm Am29LV160B device

High performance

— Access times as fast as 70 ns

Ultra low power consumption (typical values at

5 MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 9 mA read current

— 20 mA program/erase current

Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

— One 8 Kword, two 4 Kword, one 16 Kword, and

— Supports full chip erase

— Sector Protection features:

Unlock Bypass Program Command

— Reduces overall programming time when issuing

Top or bottom boot block configurations

available

operations for battery-powered applications

write operations and for compatibility with high

performance 3.3 volt microprocessors

thirty-one 64 Kbyte sectors (byte mode)

thirty-one 32 Kword sectors (word mode)

A hardware method of locking a sector to prevent

any program or erase operations within that sector

Sectors can be locked in-system or via

programming equipment

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

multiple program command sequences

Embedded Algorithms

— Embedded Erase algorithm automatically

— Embedded Program algorithm automatically

Minimum 1,000,000 write cycle guarantee

per sector

20-year data retention at 125 C

— Reliable operation for the life of the system

Package option

— 48-ball FBGA

— 48-pin TSOP

— 44-pin SO

CFI (Common Flash Interface) compliant

— Provides device-specific information to the

Compatibility with JEDEC standards

— Pinout and software compatible with single-

— Superior inadvertent write protection

Data# Polling and toggle bits

— Provides a software method of detecting program

Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

preprograms and erases the entire chip or any

combination of designated sectors

writes and verifies data at specified addresses

system, allowing host software to easily

reconfigure for different Flash devices

power supply Flash

or erase operation completion

program or erase cycle completion (not available

on 44-pin SO)

or program data to, a sector that is not being

erased, then resumes the erase operation

array data

Publication# 22358

Issue Date: November 10, 2000

Rev: B Amendment/+3

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