CY7C1021DV33-10VXIT Cypress Semiconductor Corp, CY7C1021DV33-10VXIT Datasheet - Page 7

• Manufacturer Part Number: CY7C1021DV33-10VXIT
• Description: CY7C1021DV33-10VXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1021DV33-10VXIT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (64K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05460 Rev. *F
Switching Waveforms
Write Cycle No. 1 (CE Controlled)
Write Cycle No. 2 (BLE or BHE Controlled)
Notes
17. Data I/O is high impedance if OE or BHE and/or BLE = V
18. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
ADDRESS
ADDRESS
BHE, BLE
BHE, BLE
DATA I/O
DATA I/O
WE
WE
CE
CE
(continued)
t
SA
t
SA
[17, 18]
IH
.
t
AW
t
AW
t
WC
t
WC
t
t
BW
t
PWE
t
SCE
SCE
t
PWE
t
BW
t
SD
t
SD
t
HD
t
HD
t
HA
t
CY7C1021DV33
HA
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