CY7C1061AV33-10BAXIT Cypress Semiconductor Corp, CY7C1061AV33-10BAXIT Datasheet - Page 4

• Manufacturer Part Number: CY7C1061AV33-10BAXIT
• Description: CY7C1061AV33-10BAXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1061AV33-10BAXIT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 16M (1M x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage Temperature ............................... –65 C to +150 C
Ambient Temperature with
Power Applied .......................................... –55 C to +125 C
Supply Voltage on V
DC Voltage Applied to Outputs
in High Z State
DC Electrical Characteristics
(Over the Operating Range)
Capacitance
AC Test Loads and Waveforms
Notes
Document #: 38-05256 Rev. *K
V
V
V
V
I
I
I
I
I
C
C
3. V
4. Tested initially and after any design or process changes that may affect these parameters.
5. Valid SRAM operation does not occur until the power supplies have reached the minimum operating V
IX
OZ
CC
SB1
SB2
Parameter
Parameter
OH
OL
IH
IL
IN
OUT
minimum operating V
IL
OUTPUT
(min) = –2.0 V for pulse durations of less than 20 ns.
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
Automatic CE Power-down
Current —TTL Inputs
Automatic CE Power-down
Current —CMOS Inputs
Input Capacitance
I/O Capacitance
[3]
CC
................................. –0.5 V to V
[4]
Description
Operating Supply Current
Z
DD
CC
0
, normal SRAM operation can begin including reduction in V
= 50 
to Relative GND
Rise time > 1 V/ns
Description
(a)
GND
3.3 V
[3]
30 pF* * Capacitive Load consists of all
50 
T
A
= 25 C, f = 1 MHz, V
[3]
..–0.5 V to +4.6 V
components of the test environment.
[5]
V
10%
TH
Test Conditions
90%
CC
ALL INPUT PULSES
= 1.5 V
I
I
GND < V
GND < V
V
CE
V
CE
CE > V
V
or V
OH
OL
CC
IN
IN
+ 0.5 V
2
2
= 8.0 mA
= –4.0 mA
> V
> V
IN
= max, f = f
< V
< 0.3 V, Max V
(c)
< 0.3 V, f = 0
CC
IH
CC
IL,
I
O
or V
< V
– 0.3 V,
CC
– 0.3 V,
Max V
< V
Test Conditions
CC
= 3.3 V
IN
CC
max
< V
, Output Disabled
DC Input Voltage
Current into Outputs (LOW)......................................... 20 mA
Operating Range
CC
Commercial
Industrial
DD
CC
, CE > V
IL
= 1/t
to the data retention (V
, f = f
,
90%
Range
RC
10%
Fall time:
> 1 V/ns
max
IH
Commercial
Industrial
,
Commercial/
Industrial
TSOP II
DD
6
8
(3.0 V). As soon as 1 ms (T
[3]
OUTPUT
............................. –0.5 V to V
CCDR
INCLUDING
JIG AND
SCOPE
–40 C to +85 C
3.3 V
0 C to +70 C
Temperature
, 2.0 V) voltage.
Ambient
5 pF*
FBGA
–0.3
Min
2.4
2.0
–1
–1
–
–
–
–
–
10
8
(b)
R1 317 
CY7C1061AV33
power
–10
V
) after reaching the
CC
Max
3.3 V  0.3 V
275
275
0.4
0.8
+1
+1
70
50
–
+ 0.3
351
Unit
R2
pF
pF
CC
V
Page 4 of 14
CC
+ 0.5 V
Unit
mA
mA
mA
mA
A
A
V
V
V
V
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