CY7C1350G-166AXI Cypress Semiconductor Corp, CY7C1350G-166AXI Datasheet
CY7C1350G-166AXI
Specifications of CY7C1350G-166AXI
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CY7C1350G-166AXI Summary of contents
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... Document #: 38-05524 Rev. *G 4-Mbit (128K x 36) Pipelined SRAM with NoBL™ Architecture Functional Description The CY7C1350G is a 3.3V, 128K x 36 synchronous-pipelined Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1350G is equipped with the advanced No Bus Latency™ ...
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... V DDQ DDQ BYTE DDQ DQP 30 D Document #: 38-05524 Rev. *G 250 MHz 200 MHz 166 MHz 2.6 2.8 3.5 325 265 240 100-Pin TQFP Pinout CY7C1350G CY7C1350G 133 MHz 100 MHz Unit 4.0 4.5 ns 225 205 DQP DDQ BYTE DDQ DDQ 60 V ...
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... Document #: 38-05524 Rev. *G 119-Ball BGA Pinout NC/18M ADV/ DQP NC/ CLK CEN DQP MODE NC/72M Description are fed to the two-bit burst counter. [1:0] to select/deselect the device select/deselect the device select/deselect the device. 2 CY7C1350G DDQ DQP DDQ DDQ DDQ DQP NC/288M NC/36M DDQ Page [+] Feedback ...
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... Burst Read Accesses The CY7C1350G has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Reads without reasserting the address inputs. ADV/LD ...
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... OE. Burst Write Accesses The CY7C1350G has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Write operations without reasserting the address inputs. ADV/LD must be driven LOW in order to load the initial address, as described in the Single Write Access section above ...
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... Table only lists a partial listing of the byte write combinations. Any combination of BW Document #: 38-05524 Rev ADV/ [ Test Conditions − 0.2V ZZ > − 0.2V ZZ > < 0.2V This parameter is sampled This parameter is sampled is valid. Appropriate write will be done on which byte write is active. X CY7C1350G OE CEN CLK L-H Tri-State L-H Tri-State L-H — Tri-State ...
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... Max, Device Deselected, All speeds ≤ 0. > V – 0.3V DDQ /2), undershoot: V (AC)> –2V (Pulse width less than t CYC IL (min.) within 200 ms. During this time V < V and CY7C1350G + 0.5V DD Ambient Temperature ( DDQ 0°C to +70°C 3.3V – 5% 2.5V – 5% +10 −40°C to +85°C DD Min ...
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... EIA/JESD51 317Ω 3.3V V OUTPUT DDQ GND 351Ω ≤ INCLUDING JIG AND (b) SCOPE R = 1667Ω 2.5V V DDQ OUTPUT GND =1538Ω ≤ INCLUDING JIG AND (b) SCOPE CY7C1350G Min. Max. Unit 105 119 BGA 100 TQFP Max. Max. Unit ...
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... V and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ CHZ CLZ = 2.5V. DDQ CY7C1350G –166 –133 –100 Max. Min. Max. Min. Max. Unit 7 ...
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... DOH CLZ D(A1) D(A2) Q(A3) D(A2+1) t OEHZ READ READ BURST Q(A3) Q(A4) READ Q(A4+1) DON’T CARE UNDEFINED is LOW. When CE is HIGH HIGH CY7C1350G OEV CHZ Q(A4) Q(A4+1) D(A5) Q(A6) t DOH t OELZ WRITE READ WRITE DESELECT D(A5) Q(A6) D(A7) is LOW HIGH ...
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... DQs are in high-Z when exiting ZZ sleep mode. Document #: 38-05524 Rev D(A1) Q(A2) Q(A3) STALL READ WRITE STALL Q(A3) D(A4) DON’T CARE UNDEFINED High-Z DON’T CARE CY7C1350G CHZ D(A4) Q(A5) NOP READ DESELECT CONTINUE Q(A5) DESELECT t ZZREC t RZZI DESELECT or READ Only Page ...
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... CY7C1350G-133AXC 51-85050 100-Pin Thin Quad Flat Pack ( 1.4 mm) Lead-Free CY7C1350G-133AXI 51-85050 100-Pin Thin Quad Flat Pack ( 1.4 mm) Lead-Free 166 CY7C1350G-166AXI 51-85050 100-Pin Thin Quad Flat Pack ( 1.4 mm) Lead-Free 200 CY7C1350G-200AXC 51-85050 100-Pin Thin Quad Flat Pack ( 1.4 mm) Lead-Free CY7C1350G-200AXI 51-85050 100-Pin Thin Quad Flat Pack ( 1.4 mm) Lead-Free Package Diagrams Document #: 38-05524 Rev ...
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... BGA ( 2.4 mm) (51-85115) ZBT is a trademark of Integrated Device Technology, Inc. NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. All product and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-05524 Rev. *G CY7C1350G 51-85115-*C Page [+] Feedback ...
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... Document History Page Document Title: CY7C1350G 4-Mbit (128K x 36) Pipelined SRAM with NoBL™ Architecture Document Number: 38-05524 Orig. of REV. ECN NO. Issue Date Change Description of Change ** 224380 See ECN RKF *A 276690 See ECN VBL *B 332895 See ECN SYT *C 351194 See ECN ...