IDT08S60C Infineon Technologies, IDT08S60C Datasheet - Page 3

• Manufacturer Part Number: IDT08S60C
• Description: Schottky (Diodes & Rectifiers) Schottky Diode Silicon Carbide
• Manufacturer: Infineon Technologies

Specifications of IDT08S60C

• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 8 A
• Max Surge Current: 59 A
• Configuration: Single
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 8.0 A
• Qc (typ): 19.0 nC
• Package: TO-220 (decapped middle leg)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IDT08S60CXK

Rev. 2.0
1 Power dissipation
P
parameter: R
3 Typ. forward characteristic
I
parameter: T
F
tot
=f(V
=f(T
80
70
60
50
40
30
20
10
20
15
10
F
0
5
0
); t
C
25
0
)
p
=400 µs
thJC(max)
j
50
1
75
100
T
V
C
F
-55 °C
2
[°C]
[V]
175 °C
125
100 °C
25 °C
150 °C
150
3
175
200
page 3
4
2 Diode forward current
I
parameter: R
4 Typ. forward characteristic in surge current
mode
I
F
F
=f(T
=f(V
20
16
12
80
60
40
20
C
F
8
4
0
0
); T
); t
25
0
p
j
=400 µs; parameter: T
≤175 °C
thJC(max)
50
2
75
; V
F(max)
100
175 °C
100 °C
T
150 °C
V
C
F
4
[°C]
[V]
125
25 °C
-55 °C
j
150
6
IDT08S60C
175
2006-03-14
200
8