TISP61089AD Bourns Inc., TISP61089AD Datasheet - Page 3

• Manufacturer Part Number: TISP61089AD
• Description: SCRs Dual P Gate Forward Conducting
• Manufacturer: Bourns Inc.

Specifications of TISP61089AD

• Breakover Current Ibo Max: 11 A
• Rated Repetitive Off-state Voltage Vdrm: 120 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Holding Current (ih Max): 150 mA
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
NOVEMBER 1995 - REVISED JULY 2008
NOTES: 3. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
Recommended Operating Conditions
Electrical Characteristics, T J = 25
Thermal Characteristics
V
R
V
V
GK(BO)
I
Q
C
V
C
GKS
I
R
θ
V
FRM
(BO)
I
I
GT
GT
D
H
GS
KA
JA
G
S
F
TISP61089 Gated Protector Series
Gate decoupling capacitor
Series resistor for GR-1089-CORE first-level surge survival
Series resistor for GR-1089-CORE first-level and second-level surge survival
Series resistor for GR-1089-CORE intra-building port surge survival
Series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector
Off-state current
Breakover voltage
Gate-cathode impulse
breakover voltage
Forward voltage
Peak forward recovery
voltage
Holding current
Gate reverse current
Gate trigger current
Gate-cathode trigger
voltage
Gate switching charge
Cathode-anode off-
state capacitance
Parameter
device terminals are a.c. connected to the guard terminal of the bridge.
Junction to free air thermal resistance
Parameter
V
2/10 µs, I
2/10 µs, I
1.2/50 µs, I
1.2/50 µs, I
2/10 µs, I
2/10 µs, I
1.2/50 µs, I
1.2/50 µs, I
I
2/10 µs, I
2/10 µs, I
1.2/50 µs, I
1.2/50 µs, I
I
V
I
I
1.2/50 µs, I
f = 1 MHz, V
F
T
T
T
D
GG
= 5 A, t
= -1 A, di/dt = 1A/ms, V
= -3 A, t
= -3 A, t
= V
°
C (Unless Otherwise Noted)
= V
DRM
GK
PP
PP
PP
PP
PP
PP
w
Component
p(g)
p(g)
, V
PP
PP
PP
PP
PP
PP
= V
PP
= 200 µs
= -56 A, R
= -100 A, R
= -56 A, R
= -100 A, R
= 56 A, R
= 100 A, R
d
GK
≥ 20 µs, V
≥ 20 µs, V
= -53 A, R
= -96 A, R
= -53 A, R
= -96 A, R
= 53 A, R
= 96 A, R
= -53 A, R
= 1 V, I
GKRM
= 0
, V
G
S
S
S
KA
S
= 0, (see Note 3)
= 45 Ω, V
PCB, EIA/JESD51-2
environment, P
S
S
S
S
GG
GG
T
= 45 Ω, V
= 45 Ω, V
S
S
S
S
S
= 50 Ω, V
A
= 47 Ω, V
= 52 Ω, V
= 50 Ω, V
= 50 Ω, V
= 0
Test Conditions
GG
= 47 Ω, V
= 52 Ω, V
= 47 Ω, V
= 52 Ω, V
= 47 Ω, V
= 25 °C, EIA/JESD51-3
= -48 V
= -48 V
= -48 V
GG
GG
GG
GG
GG
GG
GG
GG
GG
GG
GG
GG
GG
= -48 V, C
= -48 V, C
= -48 V, C
= -48 V, C
= -48 V, C
= -48 V, C
Test Conditions
= -48 V, C
= -48 V, C
TOT
= -48 V, C
= -48 V, C
= -48 V, C
= -48 V, C
= -48 V, C
= 1.7 W
G
G
G
G
G
G
= 220 nF
G
G
G
G
G
G
G
= 220 nF
= 220 nF
= 220 nF
= 220 nF
= 220 nF
= 220 nF
= 220 nF
= 220 nF
= 220 nF
= 220 nF
= 220 nF
= 220 nF
D Package
V
T
T
T
T
V
J
J
J
J
D
D
= 25 °C
= 85 °C
= 25 °C
= 85 °C
= -48 V
= -3 V
-150
Min
100
Min
Min
25
40
10
8
Typ
220
Typ
-57
-60
-60
-64
0.1
Typ
12
12
16
12
9
6
8
8
Max
Max
100
Max
-50
-50
2.5
120
-5
-5
50
3
5
°C/W
Unit
Unit
Unit
mA
mA
µC
nF
µA
µA
µA
µA
pF
pF
Ω
Ω
Ω
Ω
V
V
V
V
V