BAV 99S E6327 Infineon Technologies, BAV 99S E6327 Datasheet - Page 4

• Manufacturer Part Number: BAV 99S E6327
• Description: DIODE SW DUAL SERIES 80V SOT-363
• Manufacturer: Infineon Technologies

Specifications of BAV 99S E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 150nA @ 70V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 2 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 80 V
• Forward Continuous Current: 200 mA
• Max Surge Current: 0.75 A
• Configuration: Dual Series
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 50 uA
• Maximum Power Dissipation: 250 mW
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAV 99S E6327; BAV99SE6327INTR; BAV99SE6327XT; SP000010356

Reverse current I
V
Forward current I
T
F
A
R
= 25°C
150
100
= Parameter
mA
10
nA
10
10
10
10
50
0
5
4
3
2
1
0
0
BAV 99
25
0.5
50
R
F
=
=
75
(V
(T
typ
A
F
)
)
100
1.0
max
70 V
25 V
°C
EHB00076
T
V
V
A
F
150
1.5
4
Forward Voltage V
I
Forward current I
BAV99
V
F
F
= Parameter
mA
1.0
0.5
250
200
175
150
125
100
75
50
25
V
0
0
0
0
BAV 99
15
F
= 100 mA
30
0.1 mA
10 mA
1 mA
45
50
F
F
60
=
=
75
(T
(T
S
90 105 120 °C
A
)
)
100
2007-09-19
BAV99...
EHB00078
T
T
C
A
S
150
150