BTA201-800E NXP Semiconductors, BTA201-800E Datasheet - Page 4

• Manufacturer Part Number: BTA201-800E
• Description: Triacs 3 QUADRANT TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BTA201-800E

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 13.7 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 12 mA
• Forward Voltage Drop: 1.5 V @ 1.4 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA201-800E,112

NXP Semiconductors
BTA201_SER_B_E_ER_4
Product data sheet
Fig 3.
Fig 4.
I
TSM
(A)
I
T(RMS)
(A)
(1) dI
10
10
10
3
2
1
0
3
2
10
10
t
Non-repetitive peak on-state current as a function of pulse width; maximum values
f = 50 Hz; T
RMS on-state current as a function of surge
duration; maximum values
p
5
2
T
/dt limit
20 ms
(1)
lead
10
1
54.3 C
10
1
4
surge duration (s)
001aag961
Rev. 04 — 4 February 2008
10
BTA201 series B, E and ER
10
3
Fig 5.
I
T(RMS)
(A)
1.2
1.0
0.8
0.6
0.4
0.2
0
1 A Three-quadrant triacs high commutation
50
RMS on-state current as a function of lead
temperature; maximum values
0
10
2
50
54.3 C
I
T
T
j(init)
t
p
(s)
100
= 25 C max
t
p
© NXP B.V. 2008. All rights reserved.
T
lead
003aaa955
001aag960
I
TSM
( C)
t
10
150
1
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