BTA201-800E NXP Semiconductors, BTA201-800E Datasheet - Page 8

• Manufacturer Part Number: BTA201-800E
• Description: Triacs 3 QUADRANT TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BTA201-800E

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 13.7 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 12 mA
• Forward Voltage Drop: 1.5 V @ 1.4 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA201-800E,112

NXP Semiconductors
BTA201_SER_B_E_ER_4
Product data sheet
Fig 9.
Fig 11. Normalized holding current as a function of
I
H(25 C)
I
(A)
H
I
(1) T
(2) T
(3) T
T
1.6
1.2
0.8
0.4
2
0
3
2
1
0
50
V
On-state current as a function of on-state
voltage
junction temperature
0
o
j
j
j
= 125 C; typical values
= 125 C; maximum values
= 25 C; maximum values
= 1.02 V; R
0.4
0
s
= 0.358
0.8
(1)
(2)
(3)
50
1.2
100
1.6
003aaa960
001aab099
T
j
V
( C)
T
(V)
Rev. 04 — 4 February 2008
150
2
BTA201 series B, E and ER
Fig 10. Normalized latching current as a function of
Fig 12. Critical rate of rise of off-state voltage as a
I
L(25 C)
dV
(V/ s)
I
L
(1) BTA201 series B
(2) BTA201 series E and ER
D
10
10
10
/dt
10
3
2
1
0
4
3
2
1 A Three-quadrant triacs high commutation
50
junction temperature
Gate open circuit
function of junction temperature; minimum
values
0
0
50
50
100
100
© NXP B.V. 2008. All rights reserved.
T
003aab834
001aab100
T
j
j
( C)
(1)
(2)
C
150
150
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