BTA201-800E NXP Semiconductors, BTA201-800E Datasheet - Page 7

• Manufacturer Part Number: BTA201-800E
• Description: Triacs 3 QUADRANT TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BTA201-800E

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 13.7 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 12 mA
• Forward Voltage Drop: 1.5 V @ 1.4 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA201-800E,112

NXP Semiconductors
7. Dynamic characteristics
Table 6.
BTA201_SER_B_E_ER_4
Product data sheet
Symbol
dV
dI
t
gt
Fig 7.
com
V
D
GT(25 C)
/dt
V
/dt
GT
1.6
1.2
0.8
0.4
50
Normalized gate trigger voltage as a function
of junction temperature
Parameter
rate of rise of
off-state voltage
rate of change of
commutating
current
gate-controlled
turn-on time
Dynamic characteristics
0
50
Conditions
V
T
waveform; gate open
circuit
V
dV
open circuit
V
dV
open circuit
I
V
I
dI
TM
G
DM
j
DM
DM
D
G
= 125 C; exponential
= 0.1 A;
com
com
/dt = 5 A/ s
= V
= 20 A;
= 67 % V
= 400 V; T
= 400 V; T
/dt = 20 V/ s; gate
/dt = 10 V/ s; gate
DRM(max)
100
001aab101
T
j
( C)
DRM(max)
j
j
;
= 125 C;
= 125 C;
Rev. 04 — 4 February 2008
150
;
BTA201 series B, E and ER
Fig 8.
Min
1000
12
16
-
I
GT(25 C)
I
GT
(1) T2 G
(2) T2+ G
(3) T2+ G+
BTA201-600B
BTA201-800B
2
1
3
0
1 A Three-quadrant triacs high commutation
50
Normalized gate trigger current as a function
of junction temperature
Typ
-
-
-
2
(1)
(2)
(3)
Max
-
-
-
-
0
Min
600
2.5
3.5
-
50
BTA201-800ER
BTA201-600E
BTA201-800E
Typ
-
-
-
2
100
© NXP B.V. 2008. All rights reserved.
003aaa959
T
j
( C)
(3)
Max
-
-
-
-
(2)
(1)
150
Unit
V/ s
A/ms
A/ms
7 of 12
s