BTA201-800E NXP Semiconductors, BTA201-800E Datasheet - Page 6

• Manufacturer Part Number: BTA201-800E
• Description: Triacs 3 QUADRANT TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BTA201-800E

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 13.7 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 12 mA
• Forward Voltage Drop: 1.5 V @ 1.4 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA201-800E,112

NXP Semiconductors
6. Static characteristics
Table 5.
T
BTA201_SER_B_E_ER_4
Product data sheet
Symbol Parameter
I
I
I
V
V
I
GT
L
H
D
j
T
GT
= 25 C unless otherwise specified.
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage V
off-state current
Static characteristics
Conditions
V
V
V
I
V
V
T
D
D
D
D
D
D
T2+ G+
T2+ G
T2 G
T2+ G+
T2+ G
T2 G
= 1.4 A; see
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
DRM(max)
T
GT
GT
T
T
= 0.1 A; see
= 0.1 A; see
= 0.1 A; see
= 0.1 A; see
= 0.1 A; T
Figure 9
; T
Rev. 04 — 4 February 2008
j
= 125 C
j
= 125 C
Figure 8
Figure 7
Figure 10
Figure 11
BTA201 series B, E and ER
1 A Three-quadrant triacs high commutation
Min
5
5
5
-
-
-
-
-
-
0.2
-
BTA201-600B
BTA201-800B
Typ
-
-
-
-
-
-
-
1.2
0.7
0.3
0.1
Max
50
50
50
30
50
30
30
1.5
1.5
-
0.5
Min
1
1
1
-
-
-
-
-
-
0.2
-
BTA201-800ER
BTA201-600E
BTA201-800E
Typ
-
-
-
-
-
-
-
1.2
0.7
0.3
0.1
© NXP B.V. 2008. All rights reserved.
Max
10
10
10
12
20
12
12
1.5
1.5
-
0.5
6 of 12
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA