BT151X-500R NXP Semiconductors, BT151X-500R Datasheet - Page 3

• Manufacturer Part Number: BT151X-500R
• Description: SCRs RAIL SCR
• Manufacturer: NXP Semiconductors

Specifications of BT151X-500R

• Breakover Current Ibo Max: 110 A
• Rated Repetitive Off-state Voltage Vdrm: 500 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-186A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT151X-500R,127

Philips Semiconductors
9397 750 13162
Product data sheet
Fig 1. Total power dissipation as a function of average on-state current; maximum values.
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
I
P
(W)
TSM
(A)
tot
160
120
15
10
80
40
5
0
0
a = form factor = I
f = 50 Hz.
values.
0
1
T(RMS)
/I
T(AV)
.
2
10
4
Rev. 04 — 9 June 2004
4
2.8
10
2
2.2
conduction
(degrees)
angle
120
180
30
60
90
6
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT151X series
factor
1.9
form
1.57
2.8
2.2
1.9
a
4
T
I
T
n
j
I
initial = 25 C max
T(AV)
t
p
(A)
001aaa961
001aaa957
I
1.57
TSM
a =
t
10
Thyristors
8
3
57.5
80
102.5
125
T
hs(max)
( C)
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