BT139-600E NXP Semiconductors, BT139-600E Datasheet - Page 6

• Manufacturer Part Number: BT139-600E
• Description: Triacs RAIL TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT139-600E

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 170 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 25 mA
• Holding Current (ih Max): 45 mA
• Forward Voltage Drop: 1.6 V @ 20 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-78
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT139-600E,127

Philips Semiconductors
6. Characteristics
Table 5:
T
9397 750 13437
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
t
GT
L
H
D
gt
j
T
GT
= 25 C unless otherwise specified.
D
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state leakage
current
critical rate of rise of
off-state voltage
gate controlled
turn-on time
Conditions
V
V
Figure 10
V
Figure 11
I
V
V
T
V
V
T
waveform; gate open circuit
I
I
T
TM
G
j
j
D
D
D
D
D
D
DM
T2+ G+
T2+ G
T2 G
T2 G+
T2+ G+
T2+ G
T2 G
T2 G+
= 20 A;
= 125 C
= 125 C; exponential
= 0.1 A; dI
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 20 A; V
= 67 % V
DRM(max)
Rev. 03 — 23 September 2004
Figure 9
T
GT
GT
T
T
G
D
= 0.1 A;
= 0.1 A;
DRM(max)
/dt = 5 A/ s
= 0.1 A;
= 0.1 A;
= 0.1 A;
; T
= V
j
DRM(max)
= 125 C
Figure 8
Figure 7
;
;
Min
-
-
-
-
-
-
-
-
-
-
-
0.25
-
-
-
BT139 series E
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Typ
2.5
4
5
11
3.2
16
4
5.5
4
1.2
0.7
0.4
0.1
50
2
Triacs; sensitive gate
Max
10
10
10
25
30
40
30
40
45
1.6
1.5
-
0.5
-
-
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/ s
s
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