BT136X-600F NXP Semiconductors, BT136X-600F Datasheet - Page 5

• Manufacturer Part Number: BT136X-600F
• Description: Triacs RAIL TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT136X-600F

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 27 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 70 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.7 V @ 5 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-186A
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT136X-600F,127

Philips Semiconductors
June 2001
Triacs
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
2.5
1.5
0.5
3
2
1
0
-50
-50
(T
3
2
1
0
IGT(25 C)
IL(25 C)
-50
IGT(Tj)
IL(Tj)
IH(25C)
IH(Tj)
Fig.7. Normalised gate trigger current
j
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
Tj / C
Tj / C
Tj / C
50
50
50
100
T2+ G-
T2- G-
100
100
T2+ G+
T2- G+
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
5
Fig.10. Typical and maximum on-state characteristic.
temperature, parameter commutation dI
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
Fig.11. Transient thermal impedance Z
Fig.12. Typical commutation dV/dt versus junction
1000
12
10
100
0.01
8
6
4
2
0
10
0.1
10
0
1
10us
IT / A
1
0
Rs = 0.091 ohms
Tj = 125 C
dVcom/dt (V/us)
Vo = 1.27 V
Zth j-hs (K/W)
Tj = 25 C
with heatsink compound
without heatsink compound
dIcom/dt = 5.1
0.5
0.1ms
unidirectional
A/ms
pulse width t
1ms
1
50
3.9
VT / V
tp / s
10ms
Tj / C
1.5
3
bidirectional
typ
P
2.3
D
p
BT136X series
0.1s
.
100
Product specification
2
1.8
t p
off-state dV/dt limit
BT136...F SERIES
1.4
max
BT136 SERIES
T
1s
2.5
th j-hs
/dt. The triac
t
, versus
Rev 1.400
10s
150
3
T
/dt.