BT151X-800R NXP Semiconductors, BT151X-800R Datasheet - Page 9

• Manufacturer Part Number: BT151X-800R
• Description: SCRs RAIL SCR
• Manufacturer: NXP Semiconductors

Specifications of BT151X-800R

• Breakover Current Ibo Max: 110 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-186A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT151X-800R,127

Philips Semiconductors
10. Revision history
Table 7:
9397 750 13162
Product data sheet
Document ID
BT151X_SERIES_4
Modifications:
BT151X_SERIES_3
BT151X_SERIES_2
BT151X_SERIES_1
Revision history
Release date
20040609
20030901
19990601
19970901
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The format of this specification has be redesigned to comply with Philips Semiconductors’ new
presentation and information standard
Data sheet status
Product specification
Product specification
Product specification
Product specification
Rev. 04 — 9 June 2004
Change notice
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Order number
9397 750 13162
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© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT151X series
Supersedes
BT151X_SERIES_3
BT151X_SERIES_2
BT151X_SERIES_1
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Thyristors
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