BLF6G27-10G NXP Semiconductors, BLF6G27-10G Datasheet - Page 6

• Manufacturer Part Number: BLF6G27-10G
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27-10G

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.256 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 3.5 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Transistor Type: N Channel
• Drain Source Voltage Vds: 65V
• Continuous Drain Current Id: 3.5A
• Power Dissipation Pd: 10W
• No. Of Pins: 3
• Rohs Compliant: Yes
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2W(Typ)
• Power Gain (typ)@vds: 19@28VdB
• Frequency (min): 2.5GHz
• Frequency (max): 2.7GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 0.8(Min)S
• Drain Source Resistance (max): 1256@6.15Vmohm
• Reverse Capacitance (typ): 3.6@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 20%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27-10G,112

NXP Semiconductors
BLF6G27-10_BLF6G27-10G
Product data sheet
Fig 6.
Fig 8.
(dB)
(dB)
G
G
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
p
p
24
22
20
18
16
14
25
23
21
19
17
15
10
10
V
single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Power gain and drain efficiency as function of
load power; typical values
V
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Power gain as a function of load power;
typical values
1
DS
1
DS
= 28 V; I
= 28 V; I
G
D
p
Dq
Dq
= 130 mA; f = 2600 MHz;
= 130 mA; single carrier IS-95;
(2)
(1)
(3)
1
1
P
L(AV)
P
L
(W)
(W)
All information provided in this document is subject to legal disclaimers.
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10
10
50
40
30
20
10
0
(%)
D
BLF6G27-10; BLF6G27-10G
Fig 7.
Fig 9.
ACPR
(dBc)
(W)
P
(1) Low frequency component
(2) High frequency component
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
0.16
0.12
0.08
0.04
i
35
45
55
65
75
0
10
10
V
single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz; IBW = 30 kHz.
Adjacent channel power ratio as a function of
load power; typical values
V
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Input power as a function of load power;
typical values
1
DS
1
DS
ACPR
ACPR
ACPR
= 28 V; I
= 28 V; I
885k
1500k
1980k
Dq
Dq
WiMAX power LDMOS transistor
(2)
(1)
= 130 mA; f = 2600 MHz;
= 130 mA; single carrier IS-95;
1
1
(3)
(2)
(1)
P
L(AV)
P
L
(W)
© NXP B.V. 2011. All rights reserved.
(1)
(2)
(2)
(1)
(W)
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10
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