BLF6G27-10G NXP Semiconductors, BLF6G27-10G Datasheet - Page 7

• Manufacturer Part Number: BLF6G27-10G
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27-10G

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.256 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 3.5 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Transistor Type: N Channel
• Drain Source Voltage Vds: 65V
• Continuous Drain Current Id: 3.5A
• Power Dissipation Pd: 10W
• No. Of Pins: 3
• Rohs Compliant: Yes
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2W(Typ)
• Power Gain (typ)@vds: 19@28VdB
• Frequency (min): 2.5GHz
• Frequency (max): 2.7GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 0.8(Min)S
• Drain Source Resistance (max): 1256@6.15Vmohm
• Reverse Capacitance (typ): 3.6@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 20%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27-10G,112

NXP Semiconductors
8. Test information
BLF6G27-10_BLF6G27-10G
Product data sheet
Fig 10. Component layout for 2500 MHz to 2700 MHz test circuit BLF6G27-10
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with ε
thickness = 0.76 mm.
See
Table 9
C1
All information provided in this document is subject to legal disclaimers.
C2
for list of components.
Rev. 3 — 28 February 2011
BLF6G27-10
Input Rev 2
NXP
C3
BLF6G27-10; BLF6G27-10G
PCB1
R1
C4
WiMAX power LDMOS transistor
C5
BLF6G27-10
Output Rev 2
NXP
C6
L1
© NXP B.V. 2011. All rights reserved.
C7
R2
001aaj360
PCB2
r
C8
= 3.5 and
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