US1MHE3/61T Vishay, US1MHE3/61T Datasheet - Page 2

DIODE 1A 1000V 75NS UF SMD

US1MHE3/61T

Manufacturer Part Number
US1MHE3/61T
Description
DIODE 1A 1000V 75NS UF SMD
Manufacturer
Vishay
Datasheet

Specifications of US1MHE3/61T

Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.7V @ 1A
Voltage - Dc Reverse (vr) (max)
1000V (1kV)
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
10µA @ 1000V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
75ns
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Repetitive Reverse Voltage Vrrm Max
1kV
Forward Current If(av)
1A
Forward Voltage Vf Max
1.7V
Reverse Recovery Time Trr Max
75ns
Forward Surge Current Ifsm Max
30A
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1000 V
Forward Voltage Drop
1.7 V
Recovery Time
75 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
US1MHE3/61T
Manufacturer:
VISHAY
Quantity:
130 000
Part Number:
US1MHE3/61T
Manufacturer:
VISHAY/威世
Quantity:
20 000
US1A thru US1M
Vishay General Semiconductor
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Note:
(1) P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad area
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous
forward voltage
Maximum DC reverse current at
rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
THERMAL CHARACTERISTICS (T
PARAMETER
Maximum thermal resistance
ORDERING INFORMATION (Example)
PREFERRED P/N
US1J-E3/61T
US1J-E3/5AT
US1JHE3/61T
US1JHE3/5AT
A
= 25 °C unless otherwise noted)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Figure 1. Forward Current Derating Curve
Resistive or Inductive Load
0.2 x 0.2" (5.0 x 5.0 mm)
(1)
(1)
25
(1)
Copper Pad Areas
Lead Temperature (°C)
50
UNIT WEIGHT (g)
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
(1)
For technical questions within your region, please contact one of the following:
75
0.064
0.064
0.064
0.064
1.0 A
I
I
4.0 V, 1 MHz
TEST CONDITIONS
F
rr
= 0.5 A, I
= 0.25 A
100
T
T
125
A
A
R
= 100 °C
= 25 °C
= 1.0 A,
PREFERRED PACKAGE CODE
A
= 25 °C unless otherwise noted)
150
A
= 25 °C unless otherwise noted)
SYMBOL
SYMBOL
R
R
61T
5AT
61T
5AT
V
C
t
I
θJA
θJL
rr
R
F
J
US1A
US1A
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
US1B
US1B
30
25
20
15
10
5
0
1
BASE QUANTITY
1.0
50
15
US1D
US1D
1800
7500
1800
7500
Number of Cycles at 60 Hz
US1G
US1G
10
50
75
27
T
8.3 ms Single Half Sine-Wave
13" diameter plastic tape and reel
13" diameter plastic tape and reel
L
10
7" diameter plastic tape and reel
7" diameter plastic tape and reel
= 110 °C
US1J
US1J
DELIVERY MODE
Document Number: 88768
US1K
US1K
1.7
75
10
Revision: 27-Aug-07
US1M
US1M
100
UNIT
UNIT
°C/W
µA
pF
ns
V

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