SMBYT03-400 STMicroelectronics, SMBYT03-400 Datasheet
SMBYT03-400
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SMBYT03-400 Summary of contents
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... Tstg Storage and junction temperature range Tj Symbol V RRM Repetitive peak reverse voltage THERMAL RESISTANCE Symbol Rth (j-l) Junction-leads October 1999 - FAST RECOVERY RECTIFIER DIODES Parameter Parameter Parameter SMBYT03 SMC Value Unit 10 Tl= 0.5 tp=10ms 60 sinusoidal - 150 - 150 Value Unit 400 Value ...
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... SMBYT03 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol 100 100 C j Pulse test : * tp = 380 s, duty cycle < ms, duty cycle < RECOVERY CHARACTERISTICS Symbol trr TURN-OFF SWITCHING CHARACTERISTICS (Without serie inductance) Symbol 200V IRM 100 evaluate the conduction losses use the following equation : 1 0. F(AV) ...
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... Fig.6 : Average current versus ambient temperature. (duty cycle : 0.5) I F(av)(A) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 P=0.5W P=1.5W P=2.5W Zth(j-c) (tp Rth(j- Single pulse tp(s) 0.01 0.1 Rth(j-a)=Rth(j-l) o Rth(j-a)=65 C/W 1cm Cu 2 Tamb 100 120 SMBYT03 =tp =tp =0.5 T =tp/T tp 140 160 3/5 ...
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... SMBYT03 Fig.7 : Recovery time versus dI Fig.9 : Peak reverse current versus dIF/dt. Fig.11 : Dynamic parameters versus junction temperature. 4/5 /dt. Fig.8 : Peak forward voltage versus dI F Fig.10 : Recovery charge versus dIF/dt. (typical values) Fig.12 : Thermal resistance junction to ambient versus copper surface under each lead. ...
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... Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. REF 3.3 2.0 STMicroelectronics GROUP OF COMPANIES http://www.st.com SMBYT03 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 1.90 2.45 0.075 0.096 0.05 0.20 0.002 0.008 2.90 3.2 0.114 ...