1N5818G ON Semiconductor, 1N5818G Datasheet - Page 4

• Manufacturer Part Number: 1N5818G
• Description: DIODE SCHOTTKY 1A 30V DO-41
• Manufacturer: ON Semiconductor

Specifications of 1N5818G

• Voltage - Forward (vf) (max) @ If: 550mV @ 1A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 1 A @ Ta=55C
• Max Surge Current: 25 A
• Configuration: Single
• Forward Voltage Drop: 0.875 V @ 3 A
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: - 65 C to + 125 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1N5818G; 1N5818GOS

(R
line values for preliminary engineering, or in case the tie
point temperature cannot be measured.
Mounting
90
80
70
60
50
40
30
20
10
Method
0.07
0.05
0.03
0.02
0.01
Data shown for thermal resistance, junction−to−ambient
qJA
1.0
0.7
0.5
0.3
0.2
0.1
2
3
1
1
0.1
) for the mountings shown is to be used as typical guide-
Figure 4. Steady−State Thermal Resistance
TYPICAL VALUES FOR R
1/8
NOTE 4. — MOUNTING DATA
BOTH LEADS TO HEATSINK,
0.2
1/8
52
67
EQUAL LENGTH
1/4
L, LEAD LENGTH (INCHES)
MAXIMUM
0.5
Lead Length, L (in)
3/8
1/4
65
80
1.0
50
1/2
1/2
72
87
qJA
2.0
5/8
TYPICAL
IN STILL AIR
100
3/4
85
3/4
5.0
1N5817, 1N5818, 1N5819
Figure 6. Thermal Response
7/8
10
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R
°C/W
°C/W
°C/W
qJA
t, TIME (ms)
1.0
20
4
0.07
0.05
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
L
VECTOR PIN MOUNTING
50
0.2
Mounting Method 1
Sine Wave
I
I
Capacitive
(FM)
(AV)
P.C. Board with
1−1/2″ x 1−1/2″
copper surface.
Loads
L
Mounting Method 2
= π (Resistive Load)
DT
DT
r(t) = normalized value of transient thermal resistance at time, t, from Figure 6,
i.e.:
r(t) =
100
t
JL
JL
Z
p
Figure 5. Forward Power Dissipation
qJL(t)
{
= P
= the increase in junction temperature above the lead temperature
r(t
1
pk
I
+ t
0.4
L
F(AV)
10
20
• R
5
p
= Z
) = normalized value of transient thermal resistance at time, t
200
qJL
t
, AVERAGE FORWARD CURRENT (AMP)
1
qJL
P
[D + (1 − D) • r(t
pk
• r(t)
L
0.6
1N5817−19
500
0.8
P
pk
1
TIME
+ t
p
1.0
L = 3/8″
) + r(t
1.0k
p
BOARD GROUND
DUTY CYCLE, D = t
PEAK POWER, P
an
equivalent square power pulse.
) − r(t
Mounting Method 3
T
1−1/2″ x 1−1/2″
copper surface.
PLANE
P.C. Board with
1
SQUARE WAVE
J
)] where
≈ 125°C
2.0k
2.0
pk
, is peak of
p
dc
/t
1
5.0k
1
+ t
p
.
10k
4.0