1N5818G ON Semiconductor, 1N5818G Datasheet - Page 5

DIODE SCHOTTKY 1A 30V DO-41

1N5818G

Manufacturer Part Number
1N5818G
Description
DIODE SCHOTTKY 1A 30V DO-41
Manufacturer
ON Semiconductor
Datasheet

Specifications of 1N5818G

Voltage - Forward (vf) (max) @ If
550mV @ 1A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
1mA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
1 A @ Ta=55C
Max Surge Current
25 A
Configuration
Single
Forward Voltage Drop
0.875 V @ 3 A
Maximum Reverse Leakage Current
1000 uA
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1N5818G
1N5818GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1N5818G
Manufacturer:
ON Semiconductor
Quantity:
220
Part Number:
1N5818G
Manufacturer:
ON/安森美
Quantity:
20 000
sistance for any mounting configuration to be found. For a
given total lead length, lowest values occur when one side of
the rectifier is brought as close as possible to the heatsink.
Terms in the model signify:
T
T
R
R
R
P
A
L
qS
qL
qJ
D
Use of the above model permits junction to lead thermal re-
= Ambient Temperature
= Lead Temperature
= Power Dissipation
0.07
0.05
0.03
0.02
= Thermal Resistance, Junction to Case
= Thermal Resistance, Lead to Heatsink
= Thermal Resistance, Heatsink to Ambient
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
20
10
0.1
0.2
v
Figure 7. Typical Forward Voltage
T
F
C
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
= 100°C
0.3
0.4
0.5
T
T
C
J
= Junction Temperature
0.6
= Case Temperature
T
0.7
R
A(A)
qS(A)
0.8
T
25°C
NOTE 5. — THERMAL CIRCUIT MODEL
L(A)
(For heat conduction through the leads)
0.9
R
1N5817, 1N5818, 1N5819
qL(A)
1.0 1.1
T
C(A)
http://onsemi.com
R
qJ(A)
T
J
5
0.05
0.03
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
30
20
15
spectively.) Values for thermal resistance components are:
R
R
7.0
5.0
3.0
30
20
10
P
qL
qJ
1.0
0
R
D
(Subscripts A and K refer to anode and cathode sides, re-
Figure 8. Maximum Non−Repetitive Surge Current
qJ(K)
= 100°C/W/in typically and 120°C/W/in maximum
= 36°C/W typically and 46°C/W maximum.
T
Surge Applied at
Rated Load Conditions
J
T
4.0
= 125°C
C(K)
T
f = 60 Hz
2.0
L
R
100°C
75°C
Figure 9. Typical Reverse Current
= 70°C
qL(K)
8.0
25°C
3.0
T
L(K)
V
12
R
, REVERSE VOLTAGE (VOLTS)
R
5.0
qS(K)
T
A(K)
NUMBER OF CYCLES
16
7.0
20
10
24
1 Cycle
20
28
30
32
1N5817
1N5818
1N5819
40
36
70
100
40

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