IDH03SG60C Infineon Technologies, IDH03SG60C Datasheet - Page 4

• Manufacturer Part Number: IDH03SG60C
• Description: DIODE SCHOTTKY 600V 3A TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDH03SG60C

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 2.3V @ 3A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 3A (DC)
• Current - Reverse Leakage @ Vr: 15µA @ 600V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 60pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 3A
• Forward Voltage Vf Max: 2.3V
• Reverse Recovery Time Trr Max: 10ns
• Forward Surge Current Ifsm Max: 11.5A
• Technology: thinQ!™ 3G
• V: 600.0 V
• If (typ): 3.0 A
• Qc (typ): 3.2 nC
• Package: TO-220 real 2pin
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Details
• Other names: SP000523728

Rev. 2.2
5 Typ. capacitance charge vs. current slope
Q
7 Typ. transient thermal impedance
Z
thJC
C
=f(di
=f(t
10
10
3.5
2.5
1.5
0.5
10
10
3
2
1
0
-1
-2
1
0
100
10
F
p
/dt )
); parameter: D = t
-6
0.5
0.2
0.1
0.05
0.02
0.01
0
5)
; I
F
10
≤I
-5
F,max
400
di
10
F
/d t [A/µs]
-4
t
P
P
/T
[s]
10
-3
700
10
-2
1000
10
page 4
-1
6 Typ. reverse current vs. reverse voltage
I
8 Typ. capacitance vs. reverse voltage
C =f(V
R
=f(V
10
10
10
10
10
10
-10
80
70
60
50
40
30
20
10
-5
-6
-7
-8
-9
0
100
R
R
); parameter: T
); T
-55 °C
100 °C
25 °C
175 °C
150 °C
C
=25 °C, f =1 MHz
200
10
0
j
300
V
V
R
R
10
[V]
[V]
1
400
IDH03SG60C
10
500
2
2009-08-04
600
10
3