IDD03SG60C Infineon Technologies, IDD03SG60C Datasheet - Page 3

• Manufacturer Part Number: IDD03SG60C
• Description: DIODE SCHOTTKY 600V 3A TO252-3
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDD03SG60C

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Voltage - Forward (vf) (max) @ If: 2.3V @ 3A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 3A (DC)
• Current - Reverse Leakage @ Vr: 15µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 60pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 3 A
• Max Surge Current: 11.5 A
• Configuration: Single
• Forward Voltage Drop: 2.3 V
• Maximum Reverse Leakage Current: 15 uA
• Maximum Power Dissipation: 38 W
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: SMD/SMT
• Technology: thinQ!™ 3G
• V: 600.0 V
• If (typ): 3.0 A
• Qc (typ): 3.2 nC
• Package: DPAK (TO-252)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IDD03SG60C; IDD03SG60CTR; SP000411542; SP000786802

Rev. 2.0
1 Power dissipation
P
3 Typ. forward characteristic
I
F
tot
=f(V
=f(T
40
35
30
25
20
15
10
3
2
1
0
5
0
F
); t
0
25
C
); parameter: R
p
=400 µs; parameter:T
1
75
thJC(max)
-55ºC
T
V
C
2
25ºC
[°C]
F
100ºC
[V]
j
150ºC
125
175ºC
3
175
page 3
4
2 Diode forward current
I
4 Typ. forward characteristic in surge current
mode
I
F
F
=f(T
=f(V
30
25
20
15
10
15
12
5
0
9
6
3
0
F
C
25
); t
)
0
4)
; T
p
=400 µs; parameter: T
j
0.5
0.7
0.3
≤175 °C; parameter: D = t
0.1
1
2
75
-55ºC
100ºC
T
25ºC
150ºC
C
V
4
[°C]
F
[V]
175ºC
j
125
IDD03SG60C
p
/T
6
2010-03-19
175
8