IDH04SG60C Infineon Technologies, IDH04SG60C Datasheet

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IDH04SG60C

Manufacturer Part Number
IDH04SG60C
Description
DIODE SCHOTTKY 600V 4A TO220-2
Manufacturer
Infineon Technologies
Series
thinQ!™r
Datasheet

Specifications of IDH04SG60C

Voltage - Forward (vf) (max) @ If
2.3V @ 4A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
4A (DC)
Current - Reverse Leakage @ Vr
25µA @ 600V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F
80pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Technology
thinQ!™ 3G
V
600.0 V
If (typ)
4.0 A
Qc (typ)
4.5 nC
Package
TO-220 real 2pin
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
 Details
Other names
SP000607026

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDH04SG60C
Manufacturer:
Infineon
Quantity:
495
Part Number:
IDH04SG60C
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IDH04SG60C
Quantity:
15
Rev. 2.2
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
• Breakdown voltage tested at 20mA
• Optimized for high temperature operation
• Lowest Figure of Merit Q
thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
Maximum ratings
Parameter
Continuous forward current
Surge non-repetitive forward current,
sine halfwave
Non-repetitive peak forward current
i ²t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
Mounting torque
3
Type
IDH04SG60C
rd
Generation thinQ!
Package
PG-TO220-2
C
TM
/I
F
SiC Schottky Diode
1)
for target applications
2)
Symbol Conditions
dv/ dt
I
I
I
∫i
V
P
T
F
F,SM
F,max
2
j
RRM
tot
, T
dt
Marking
D04G60C
stg
T
T
T
T
T
T
T
V
T
M3 and M3.5 screws
R
page 1
C
C
C
C
C
C
j
C
=25 °C
= 0….480 V
<130 °C
=25 °C, t
=150 °C, t
=25 °C, t
=25 °C, t
=150 °C, t
=25 °C
Pin 1
C
p
p
p
=10 ms
=10 µs
=10 ms
p
p
=10 ms
=10 ms
Product Summary
V
Q
I
F
DC
; T
C
C
< 130 °C
Pin 2
A
-55 ... 175
Value
13.5
0.93
120
1.8
600
18
50
43
60
4
IDH04SG60C
600
4.5
4
Unit
A
A
V
V/ns
W
°C
Mcm
2
2009-03-04
s
nC
V
A

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IDH04SG60C Summary of contents

Page 1

... F,max =25 °C, t =10 ms ∫ =150 ° =25 °C RRM 0….480 V dv =25 °C tot stg M3 and M3.5 screws page 1 IDH04SG60C 600 DC 4 < 130 ° Pin 2 A Value 4 18 13.5 120 1.8 0.93 600 50 43 -55 ... 175 Unit V/ns W °C Mcm ...

Page 2

... =400 V,I ≤ F,max c di /dt =200 A/µ =150 ° MHz =300 MHz R V =600 MHz and di/dt. No reverse recovery time constant t j LOAD page 2 IDH04SG60C Values Unit min. typ. max 3.5 K 260 °C 600 - - V - 2.1 2 0.3 25 µA - 1.3 270 ...

Page 3

... C 4 Typ. forward characteristic in surge current mode I =f 150ºC 25ºC 100ºC 9 175º [V] F page 3 IDH04SG60C ≤175 °C; parameter 0.1 0.3 0.5 0 125 T [°C] C =400 µs; parameter -55ºC 25ºC 100ºC 150ºC 175º [V] F 175 ...

Page 4

... Typ. reverse current vs. reverse voltage I =f(V ); parameter 1E1 1E0 1E-1 1E-2 1E-3 1E-4 100 700 1000 8 Typ. capacitance vs. reverse voltage / [s] P page 4 IDH04SG60C j 175 °C 150 °C 100 °C 25 °C -55 °C 200 300 400 500 V [V] R =25 ° MHz [V] R 600 3 10 2009-03-04 ...

Page 5

... Typ. C stored energy E =f 2.5 2.0 1.5 1.0 0.5 0.0 0 100 200 V Rev. 2.2 300 400 500 600 [V] R page 5 IDH04SG60C 2009-03-04 ...

Page 6

... PG-TO220-2: Outline Dimensions in mm/inches Rev. 2.2 page 6 IDH04SG60C 2009-03-04 ...

Page 7

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 7 IDH04SG60C 2009-03-04 ...

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