IDD06SG60C Infineon Technologies, IDD06SG60C Datasheet - Page 3

• Manufacturer Part Number: IDD06SG60C
• Description: DIODE SCHOTTKY 600V 6A TO252-3
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDD06SG60C

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 2.3V @ 6A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 6A (DC)
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 130pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 6A
• Forward Voltage Vf Max: 2.3V
• Reverse Recovery Time Trr Max: 10ns
• Forward Surge Current Ifsm Max: 32A
• Operating: RoHS Compliant
• Technology: thinQ!™ 3G
• V: 600.0 V
• If (typ): 6.0 A
• Qc (typ): 8.0 nC
• Package: DPAK (TO-252)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000411546; SP000786808

Rev. 2.0
1 Power dissipation
P
3 Typ. forward characteristic
I
F
tot
=f(V
=f(T
80
70
60
50
40
30
20
10
F
0
8
7
6
5
4
3
2
1
0
); t
C
25
0
); parameter: R
p
=400 µs; parameter:T
50
1
75
thJC(max)
T
C
100
V
-55ºC
175ºC
2
[°C]
F
[V]
j
25ºC
125
100ºC
3
150ºC
150
175
page 3
4
2 Diode forward current
I
4 Typ. forward characteristic in surge current
mode
I
F
F
=f(T
=f(V
45
40
35
30
25
20
15
10
40
30
20
10
F
C
5
0
0
); t
)
25
4)
0
; T
p
0.3
0.5
0.1
0.7
=400 µs; parameter: T
1
j
≤175 °C; parameter: D = t
50
2
100ºC
75
25ºC
-55ºC
4
T
C
100
V
[°C]
F
[V]
150ºC
j
6
175ºC
125
IDD06SG60C
p
/T
8
150
2010-03-19
175
10