IDB06S60C Infineon Technologies, IDB06S60C Datasheet

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IDB06S60C

Manufacturer Part Number
IDB06S60C
Description
DIODE SCHOTTKY 600V 6A D2PAK
Manufacturer
Infineon Technologies
Series
thinQ!™r
Datasheet

Specifications of IDB06S60C

Voltage - Forward (vf) (max) @ If
1.7V @ 6A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
6A (DC)
Current - Reverse Leakage @ Vr
80µA @ 600V
Diode Type
Silicon Carbide Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Capacitance @ Vr, F
280pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Technology
thinQ!™ 2G
V
600.0 V
If (typ)
6.0 A
Qc (typ)
15.0 nC
Package
D2PAK (TO-263)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000411538

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Rev. 2.1
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
• Breakdown voltage tested at 5mA
thinQ! 2G Diode designed for fast switching applications like:
• CCM PFC
• Motor Drives
Maximum ratings, at T
Parameter
Continuous forward current
RMS forward current
Surge non-repetitive forward current,
sine halfwave
Repetitive peak forward current
Non-repetitive peak forward current
i ²t value
Repetitive peak reverse voltage
Diode ruggedness dv/dt
Power dissipation
Operating and storage temperature
2
Type
IDB06S60C
nd
Generation thinQ!
Package
D
2
PAK
j
=25 °C, unless otherwise specified
TM
SiC Schottky Diode
1)
for target applications
2)
dv/ dt
Symbol Conditions
I
I
I
I
I
∫i
V
P
T
F
F,RMS
F,SM
F,RM
F,max
2
j
RRM
tot
, T
dt
stg
T
f =50 Hz
T
T
T
T
T
V
T
R
page 1
C
C
j
C
C
C
C
=150 °C,
=0…480V
<135 °C
=25 °C, t
=100 °C, D =0.1
=25 °C, t
=25 °C, t
=25 °C
D06S60C
Marking
p
p
p
=10 ms
=10 µs
=10 ms
Product Summary
V
Q
I
F
DC
c
Pin 2
C
D
-55 ... 175
2
Value
PAK
210
600
46
24
10
50
52
6
9
Pin 3
A
IDB06S60C
600
15
6
Unit
A
A
V
V/ns
W
°C
V
nC
A
2
2009-01-07
s

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IDB06S60C Summary of contents

Page 1

... Hz F,RMS I T =25 °C, t = =150 ° F,RM T =100 ° =25 °C, t =10 µs F,max =25 °C, t =10 ms ∫ RRM V =0…480V dv =25 °C tot stg page 1 IDB06S60C 600 PAK Pin 2 Pin Value Unit 210 600 -55 ... 175 °C 2009-01-07 ...

Page 2

... F,max c di /dt =200 A/µ =150 ° MHz =300 MHz R V =600 MHz R 2 (one layer, 70µm thick) copper area for drain , I , di/dt. No reverse recovery time constant t j LOAD page 2 IDB06S60C Values Unit min. typ. max 2.9 K 260 °C 600 - - V - 1.5 1 ...

Page 3

... C 4 Typ. forward characteristic in surge current mode I =f 100 °C 175 ° °C 150 ° [V] F page 3 IDB06S60C ≤175 ° 100 125 150 T [°C] C =400 µs; parameter 175 °C -55 °C 25 °C 100 °C 150 ° [V] F 175 8 2009-01-07 ...

Page 4

... Typ. reverse current vs. reverse voltage I =f parameter 100 10 15 [A] 8 Typ. capacitance vs. reverse voltage C =f 400 300 200 100 [s] P page 4 IDB06S60C j 175 °C 100 °C 150 °C 25 °C -55 °C 200 300 400 500 V [V] R =25 ° MHz [V] R 600 3 10 2009-01-07 ...

Page 5

... Typ. C stored energy E =f 100 200 V Rev. 2.1 10 Typ. capacitance charge vs. current slope Q =f(di / 300 400 500 600 100 [V] R page 5 IDB06S60C =150 °C; I ≤I ,max 400 700 di /dt [A/µs] F 1000 2009-01-07 ...

Page 6

... PG-TO220-3-45 (D2Pak): Outline Dimensions in mm/inches Rev. 2.1 Rev. 2.1 page 6 page 6 IDB06S60C 2009-01-07 2009-01-07 ...

Page 7

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 7 IDB06S60C 2009-01-07 ...

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