IDB10S60C Infineon Technologies, IDB10S60C Datasheet
IDB10S60C
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IDB10S60C Summary of contents
Page 1
... F,RMS I T =25 °C, t = =150 ° F,RM T =100 ° =25 °C, t =10 µs F,max =25 °C, t =10 ms ∫ RRM V =0…480V dv =25 °C tot stg page 1 IDB10S60C 600 PAK (PG-TO220-3-45) Pin 1 Pin Value Unit 350 600 -55 ... 175 °C 2008-03-26 ...
Page 2
... F,max c di /dt =200 A/µ =150 ° MHz =300 MHz R V =600 MHz R 2 (one layer, 70µm thick) copper area for drain , I , di/dt. No reverse recovery time constant t j LOAD page 2 IDB10S60C Values Unit min. typ. max 1.8 K 260 °C 600 - - V - 1.5 1 ...
Page 3
... C 4 Typ. forward characteristic in surge current mode I =f 120 100 °C 175°C 100 150 ° [V] F page 3 IDB10S60C ≤175 ° 100 125 150 T [°C] C =400 µs; parameter -55 °C 175°C 25 °C 100 °C 150 ° [V] F 175 8 2008-03-26 ...
Page 4
... Typ. reverse current vs. reverse voltage I =f parameter 0 100 [A] 8 Typ. capacitance vs. reverse voltage C =f 600 500 400 300 200 100 [s] P page 4 IDB10S60C j 175 °C 100 °C 150 °C -55 °C 25 °C 200 300 400 500 V [V] R =25 ° MHz [V] R 600 3 10 2008-03-26 ...
Page 5
... Typ. C stored energy E =f 100 200 V Rev. 2.0 10 Typ. Capacitive charge vs. current slope Q =f(di / 300 400 500 600 100 [V] R page 5 IDB10S60C =150 °C; I ≤ F,max 400 700 di /dt [A/µs] F 1000 2008-03-26 ...
Page 6
... PG-TO220-3-45 (D PAK): Outline Dimensions in mm/inches Rev. 2.0 page 6 IDB10S60C 2008-03-26 ...
Page 7
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 7 IDB10S60C 2008-03-26 ...